Diode-pumped, actively internal-Q-switched Nd:MgO:PPLN laser

Y. H. Chen, Y. C. Chang, C. H. Lin, T. Y. Chung

研究成果: 雜誌貢獻期刊論文同行評審

15 引文 斯高帕斯(Scopus)

摘要

We demonstrated a laser-diode-pumped, electro-optically internal-Q-switched laser system radiating at 1.085 μm fabricated using a periodically poled Nd:MgO:LiNbO3 (Nd:MgO:PPLN) crystal. The Nd:MgO:PPLN is 17-mm long and has a 12-mm long, 13.6-μm period polarization-mode quasi-phase-matching (PM QPM) grating section functioning as the Q-switch of the laser system. When the Nd:MgO:PPLN Q-switch was driven by a 260-V voltage pulse train at 5 kHz, we obtained laser pulses of pulse energy >2.45 (if and a pulse width of ∼28 ns, corresponding to a laser peak power of ∼88 W, from this internal-Q-switched laser system with 2% output coupling at an absorbed diode pump power of 0.61 W.

原文???core.languages.en_GB???
頁(從 - 到)2048-2055
頁數8
期刊Optics Express
16
發行號3
DOIs
出版狀態已出版 - 4 2月 2008

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