@article{11ece471b3b049cdb7de16e7d49e3e8b,
title = "Diffusion mechanism and photoluminescence of erbium in GaN",
abstract = "Erbium has been diffused into GaN for the first time. A weak spontaneous emission is observed in the photoluminescence spectra after the diffusion process during 168 h at 800 °C under N2 atmosphere. The diffusion coefficient of erbium in GaN is obtained in Arrenhius expression to be D = 1.8 ± 1.3 × 10-12exp(-1 ± 0.4eV/kT) cm2/s. The result shows that the Er diffusion mechanism might be an interstitial-assisted process. The luminescence characteristics of the Er-diffused GaN is compared with the Er-implanted GaN. The methods to enhance the emission intensity of the Er-diffused GaN are discussed.",
keywords = "Diffusion, GaN, Ion implantation, Rare earth",
author = "Ting, {Yi Sheng} and Chen, {Chii Chang} and Lee, {Chien Chieh} and Chi, {Gou Chung} and Chini, {Tapas Kumar} and Purushottam Chakraborty and Chuang, {Hui Wen} and Tsang, {Jian Shihn} and Kuo, {Cheng Ta} and Tsai, {Wen Chung} and Chen, {Shu Han} and Chyi, {Jen Inn}",
note = "Funding Information: The work was supported by the grants received from the National Science Council, Taiwan and from MOE Program for Promoting Academic Excellence of Universities under the grant number 91-E-FA06-1-4.",
year = "2003",
month = dec,
doi = "10.1016/S0925-3467(03)00086-7",
language = "???core.languages.en_GB???",
volume = "24",
pages = "515--518",
journal = "Optical Materials",
issn = "0925-3467",
number = "3",
}