Dielectric Material Technologies for 2-D Semiconductor Transistor Scaling

Yuxuan Cosmi Lin, Cheng Ming Lin, Hung Yu Chen, Sam Vaziri, Xinyu Bao, Wei Yen Woon, Han Wang, Szuya Sandy Liao

研究成果: 雜誌貢獻期刊論文同行評審

5 引文 斯高帕斯(Scopus)

摘要

The 2-D semiconductors have been recognized as promising channel materials for the ultimately scaled transistor technologies beyond silicon. An essential technology enabler for 2-D semiconductor electronics is the development of dielectric materials interfaced with 2-D semiconductors. In this review article, we overview different types of dielectric materials that are suitable for different application scenarios, including high-k gate dielectrics, low- k spacers, and thermal management materials under the paradigm of 2-D semiconductor electronics. A material selection guideline for dielectric materials and the key process technology modules are discussed in detail. A special emphasis is made on how each of the dielectric technologies may enable the further scaling and practical applications of 2-D semiconductor transistors. The state-of-the-art device technologies are summarized, and the remaining challenges toward practical applications are discussed from the industrial perspective.

原文???core.languages.en_GB???
頁(從 - 到)1454-1473
頁數20
期刊IEEE Transactions on Electron Devices
70
發行號4
DOIs
出版狀態已出版 - 1 4月 2023

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