Diagnosis of Resistive Nonvolatile-8T SRAMs

Yu Ting Li; Jin Fu Li; Chun Lung Hsu; Chi Tien Sun

doi:10.1109/ISOCC.2018.8649953

Diagnosis of Resistive Nonvolatile-8T SRAMs

Yu Ting Li, Jin Fu Li, Chun Lung Hsu, Chi Tien Sun

電機工程學系

研究成果: 書貢獻/報告類型 › 會議論文篇章 › 同行評審

2 引文斯高帕斯（Scopus）

摘要

Resistive nonvolatile static random access memory (SRAM) can preserve data in power down mode and provide fast power-on speed. A resistive nonvolatile 8T (Rnv8T) SRAM cell consists of a 6T SRAM cell, two memristive devices, and two transistors. RAM faults and memristor-related faults should be considered for the testing and diagnosis of Rnv8T SRAMs. In this paper, a diagnosis methodology is proposed to distinguish RAM faults and memristor-related faults.

原文	???core.languages.en_GB???
主出版物標題	Proceedings - International SoC Design Conference 2018, ISOCC 2018
發行者	Institute of Electrical and Electronics Engineers Inc.
頁面	23-24
頁數	2
ISBN（電子）	9781538679609
DOIs	https://doi.org/10.1109/ISOCC.2018.8649953
出版狀態	已出版 - 2 7月 2018
事件	15th International SoC Design Conference, ISOCC 2018 - Daegu, Korea, Republic of 持續時間: 12 11月 2018 → 15 11月 2018

出版系列

名字	Proceedings - International SoC Design Conference 2018, ISOCC 2018

???event.eventtypes.event.conference???

???event.eventtypes.event.conference???	15th International SoC Design Conference, ISOCC 2018
國家/地區	Korea, Republic of
城市	Daegu
期間	12/11/18 → 15/11/18

存取文件

10.1109/ISOCC.2018.8649953

應用於三維積體電路可測性及可靠性設計技術-總計畫暨子計畫一：三維積體電路中堆疊式記憶體與晶粒間連接線可測性與可靠性技術
Li, J.-F. (PI)
1/05/15 → 31/07/16
研究計畫: Research

引用此

@inproceedings{9916d6748998442b890f032c9d0483d5,

title = "Diagnosis of Resistive Nonvolatile-8T SRAMs",

abstract = "Resistive nonvolatile static random access memory (SRAM) can preserve data in power down mode and provide fast power-on speed. A resistive nonvolatile 8T (Rnv8T) SRAM cell consists of a 6T SRAM cell, two memristive devices, and two transistors. RAM faults and memristor-related faults should be considered for the testing and diagnosis of Rnv8T SRAMs. In this paper, a diagnosis methodology is proposed to distinguish RAM faults and memristor-related faults.",

keywords = "Diagnosis, March test, Memristor, Nonvolatile SRAM",

author = "Li, {Yu Ting} and Li, {Jin Fu} and Hsu, {Chun Lung} and Sun, {Chi Tien}",

note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 15th International SoC Design Conference, ISOCC 2018 ; Conference date: 12-11-2018 Through 15-11-2018",

year = "2018",

month = jul,

day = "2",

doi = "10.1109/ISOCC.2018.8649953",

language = "???core.languages.en_GB???",

series = "Proceedings - International SoC Design Conference 2018, ISOCC 2018",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "23--24",

booktitle = "Proceedings - International SoC Design Conference 2018, ISOCC 2018",

}

Li, YT, Li, JF , Hsu, CL & Sun, CT 2018, Diagnosis of Resistive Nonvolatile-8T SRAMs. 於 Proceedings - International SoC Design Conference 2018, ISOCC 2018., 8649953, Proceedings - International SoC Design Conference 2018, ISOCC 2018, Institute of Electrical and Electronics Engineers Inc., 頁 23-24, 15th International SoC Design Conference, ISOCC 2018, Daegu, Korea, Republic of, 12/11/18. https://doi.org/10.1109/ISOCC.2018.8649953

Diagnosis of Resistive Nonvolatile-8T SRAMs. / Li, Yu Ting; Li, Jin Fu ; Hsu, Chun Lung 等.
Proceedings - International SoC Design Conference 2018, ISOCC 2018. Institute of Electrical and Electronics Engineers Inc., 2018. p. 23-24 8649953 (Proceedings - International SoC Design Conference 2018, ISOCC 2018).

研究成果: 書貢獻/報告類型 › 會議論文篇章 › 同行評審

TY - GEN

T1 - Diagnosis of Resistive Nonvolatile-8T SRAMs

AU - Li, Yu Ting

AU - Li, Jin Fu

AU - Hsu, Chun Lung

AU - Sun, Chi Tien

PY - 2018/7/2

Y1 - 2018/7/2

N2 - Resistive nonvolatile static random access memory (SRAM) can preserve data in power down mode and provide fast power-on speed. A resistive nonvolatile 8T (Rnv8T) SRAM cell consists of a 6T SRAM cell, two memristive devices, and two transistors. RAM faults and memristor-related faults should be considered for the testing and diagnosis of Rnv8T SRAMs. In this paper, a diagnosis methodology is proposed to distinguish RAM faults and memristor-related faults.

AB - Resistive nonvolatile static random access memory (SRAM) can preserve data in power down mode and provide fast power-on speed. A resistive nonvolatile 8T (Rnv8T) SRAM cell consists of a 6T SRAM cell, two memristive devices, and two transistors. RAM faults and memristor-related faults should be considered for the testing and diagnosis of Rnv8T SRAMs. In this paper, a diagnosis methodology is proposed to distinguish RAM faults and memristor-related faults.

KW - Diagnosis

KW - March test

KW - Memristor

KW - Nonvolatile SRAM

UR - http://www.scopus.com/inward/record.url?scp=85063186445&partnerID=8YFLogxK

U2 - 10.1109/ISOCC.2018.8649953

DO - 10.1109/ISOCC.2018.8649953

M3 - 會議論文篇章

AN - SCOPUS:85063186445

T3 - Proceedings - International SoC Design Conference 2018, ISOCC 2018

SP - 23

EP - 24

BT - Proceedings - International SoC Design Conference 2018, ISOCC 2018

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 15th International SoC Design Conference, ISOCC 2018

Y2 - 12 November 2018 through 15 November 2018

ER -

Diagnosis of Resistive Nonvolatile-8T SRAMs

摘要

出版系列

???event.eventtypes.event.conference???

存取文件

指紋

專案

應用於三維積體電路可測性及可靠性設計技術-總計畫暨子計畫一：三維積體電路中堆疊式記憶體與晶粒間連接線可測性與可靠性技術

引用此