Device stress evaluation of InAs/AlSb HEMT on silicon substrate with refractory iridium Schottky gate metal

Hsien Chin Chiu; Wen Yu Lin; Chia Yi Chou; Shih Hsien Yang; Kai Di Mai; Pei Chin Chiu; W. J. Hsueh; Jen Inn Chyi

doi:10.1016/j.mee.2015.01.017

Device stress evaluation of InAs/AlSb HEMT on silicon substrate with refractory iridium Schottky gate metal

Hsien Chin Chiu, Wen Yu Lin, Chia Yi Chou, Shih Hsien Yang, Kai Di Mai, Pei Chin Chiu, W. J. Hsueh, Jen Inn Chyi

電機工程學系

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

5 引文斯高帕斯（Scopus）

摘要

In this work, the 6-inch AlSb/InAs on Si (0 0 1) substrate is used to increase device integration and cost-effective purpose. The iridium (Ir)-gate was used for the InAs/AlSb on silicon substrate and temperature-dependent characteristics were also studied. The Ir-gate exhibited a superior metal work function which was beneficial for increasing the Schottky barrier height of InAs/AlSb on silicon heterostructures. Moreover, transmission electron microscopy, secondary ion mass spectrometry, and low frequency noise measurements were conducted to proof that the Ir-gated AlSb/InAs HEMT achieved the better stability of characteristics after self-heating and hot-carrier stresses.

原文	???core.languages.en_GB???
頁（從 - 到）	17-20
頁數	4
期刊	Microelectronic Engineering
卷	138
DOIs	https://doi.org/10.1016/j.mee.2015.01.017
出版狀態	已出版 - 20 4月 2015

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10.1016/j.mee.2015.01.017

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abstract = "In this work, the 6-inch AlSb/InAs on Si (0 0 1) substrate is used to increase device integration and cost-effective purpose. The iridium (Ir)-gate was used for the InAs/AlSb on silicon substrate and temperature-dependent characteristics were also studied. The Ir-gate exhibited a superior metal work function which was beneficial for increasing the Schottky barrier height of InAs/AlSb on silicon heterostructures. Moreover, transmission electron microscopy, secondary ion mass spectrometry, and low frequency noise measurements were conducted to proof that the Ir-gated AlSb/InAs HEMT achieved the better stability of characteristics after self-heating and hot-carrier stresses.",

keywords = "AlSb, Iridium, Schottky barrier height, Stability",

author = "Chiu, {Hsien Chin} and Lin, {Wen Yu} and Chou, {Chia Yi} and Yang, {Shih Hsien} and Mai, {Kai Di} and Chiu, {Pei Chin} and Hsueh, {W. J.} and Chyi, {Jen Inn}",

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T1 - Device stress evaluation of InAs/AlSb HEMT on silicon substrate with refractory iridium Schottky gate metal

AU - Chiu, Hsien Chin

AU - Lin, Wen Yu

AU - Chou, Chia Yi

AU - Yang, Shih Hsien

AU - Mai, Kai Di

AU - Chiu, Pei Chin

AU - Hsueh, W. J.

AU - Chyi, Jen Inn

PY - 2015/4/20

Y1 - 2015/4/20

N2 - In this work, the 6-inch AlSb/InAs on Si (0 0 1) substrate is used to increase device integration and cost-effective purpose. The iridium (Ir)-gate was used for the InAs/AlSb on silicon substrate and temperature-dependent characteristics were also studied. The Ir-gate exhibited a superior metal work function which was beneficial for increasing the Schottky barrier height of InAs/AlSb on silicon heterostructures. Moreover, transmission electron microscopy, secondary ion mass spectrometry, and low frequency noise measurements were conducted to proof that the Ir-gated AlSb/InAs HEMT achieved the better stability of characteristics after self-heating and hot-carrier stresses.

AB - In this work, the 6-inch AlSb/InAs on Si (0 0 1) substrate is used to increase device integration and cost-effective purpose. The iridium (Ir)-gate was used for the InAs/AlSb on silicon substrate and temperature-dependent characteristics were also studied. The Ir-gate exhibited a superior metal work function which was beneficial for increasing the Schottky barrier height of InAs/AlSb on silicon heterostructures. Moreover, transmission electron microscopy, secondary ion mass spectrometry, and low frequency noise measurements were conducted to proof that the Ir-gated AlSb/InAs HEMT achieved the better stability of characteristics after self-heating and hot-carrier stresses.

KW - AlSb

KW - Iridium

KW - Schottky barrier height

KW - Stability

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U2 - 10.1016/j.mee.2015.01.017

DO - 10.1016/j.mee.2015.01.017

M3 - 期刊論文

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SN - 0167-9317

VL - 138

SP - 17

EP - 20

JO - Microelectronic Engineering

JF - Microelectronic Engineering

ER -

Device stress evaluation of InAs/AlSb HEMT on silicon substrate with refractory iridium Schottky gate metal

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