摘要
The improvements in developing process modules for GaN power devices are discussed. These processes include damage removal in dry etched n- and p-GaN, implant doping, novel gate dielectrics, isolation, improved Schottky and ohmic contacts of SiC for GaN/SiC structures. Implant doping is limited by residual impurities in the material which produces compensation. Dry etching with thermal and wet etch damage removal is necessary for most devices.
原文 | ???core.languages.en_GB??? |
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頁(從 - 到) | T711-T719 |
期刊 | Materials Research Society Symposium - Proceedings |
卷 | 622 |
DOIs | |
出版狀態 | 已出版 - 2000 |