Device processing for GaN high power electronics

S. J. Pearton, X. A. Cao, H. Cho, K. P. Lee, C. Monier, F. Ren, G. Dang, A. P. Zhang, W. Johnson, J. R. LaRoche, B. P. Gila, C. R. Abernathy, R. J. Shul, A. G. Baca, J. Han, J. I. Chyi, J. M. Van Hove

研究成果: 雜誌貢獻期刊論文同行評審

摘要

The improvements in developing process modules for GaN power devices are discussed. These processes include damage removal in dry etched n- and p-GaN, implant doping, novel gate dielectrics, isolation, improved Schottky and ohmic contacts of SiC for GaN/SiC structures. Implant doping is limited by residual impurities in the material which produces compensation. Dry etching with thermal and wet etch damage removal is necessary for most devices.

原文???core.languages.en_GB???
頁(從 - 到)T711-T719
期刊Materials Research Society Symposium - Proceedings
622
DOIs
出版狀態已出版 - 2000

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