Device characteristics of the GaN/InGaN-doped channel HFETs

Yue Ming Hsin, Hung Tsao Hsu, Chang Cheng Chuo, Jen Inn Chyi

研究成果: 雜誌貢獻期刊論文同行評審

22 引文 斯高帕斯(Scopus)

摘要

First dc, small signal, and RF power characteristics of GaN/InGaN doped-channel heterojunction field effect transistors (HFETs) are reported. HFETs with a 1- μm gate length have demonstrated a maximum drain current of 272 mA/mm, a flat G m around 65 mS/mm in a V GS between -0.65 V and +2.0 V, and an on-state breakdown voltage over 50 V. Complete pinchoff was observed for a -3.5 V gate bias. Devices with a 1- μm gate length have exhibited an f T of 8 GHz and f max of 20 GHz. A saturated output power of 26 dBm was obtained at 1.9 GHz for a 1 μm × 1 mm device.

原文???core.languages.en_GB???
頁(從 - 到)501-503
頁數3
期刊IEEE Electron Device Letters
22
發行號11
DOIs
出版狀態已出版 - 11月 2001

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