@article{cc8c03e849e04573b5ba3a4786858202,
title = "Device characteristics of InGaSb/AlSb high-hole-mobility FETs",
abstract = "This letter reports the effect of growth temperature on carrier transport characteristics in In 0.4Ga 0.6Sb/AlSb heterostructure and demonstrates that hole mobility was enhanced by eliminating a parallel conducting channel in the buffer layers. Based on optimized growth conditions, hole mobility as high as 1220 cm 2/Vs with carrier concentration of 1.3 × 10 12cm -2 was achieved. A 0.2-μm-gate-length In 0.4Ga 0.6Sb/AlSb p-channel device exhibited a maximum drain current of 102 mA/mm, a peak transconductance of 92 mS/mm, and an on-state breakdown voltage over 3 V. The pinchoff was observed for a gate bias of 0.6 V at drain current of 1 mA/mm. The current-gain and power-gain cutoff frequencies were 15 and 20 GHz, respectively.",
keywords = "Heterojunction field-effect transistors (HFETs), InGaSb/AlSb",
author = "Ho, {Han Chieh} and Gao, {Zon Yan} and Lin, {Heng Kuang} and Chiu, {Pei Chin} and Hsin, {Yue Ming} and Chyi, {Jen Inn}",
note = "Funding Information: Manuscript received March 12, 2012; revised March 21, 2012; accepted March 31, 2012. Date of publication May 14, 2012; date of current version June 22, 2012. This work was supported by the Taiwan National Science Council under Contract NSC 99-2221-E-008-107-MY3 and Contract NSC 100-2221-E-008-015-MY2, and supported in part by the Taiwan Semiconductor Manufacturing Company. The review of this letter was arranged by Editor T. Wang.",
year = "2012",
doi = "10.1109/LED.2012.2193656",
language = "???core.languages.en_GB???",
volume = "33",
pages = "964--966",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
number = "7",
}