Device characteristics of AlGaN/GaN HEMTs with p-GaN cap layer

Chih Hao Li, Yan Cheng Jiang, Hsin Chang Tsai, Yi Nan Zhong, Yue ming Hsin

研究成果: 雜誌貢獻 › 編者言

5 引文 斯高帕斯（Scopus）

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Engineering & Materials Science

Chemical Compounds