Development of SiC-based gas sensors for aerospace applications

G. W. Hunter, P. G. Neudeck, J. Xu, D. Lukco, A. Trunek, M. Artale, P. Lampard, D. Androjna, D. Makel, B. Ward, C. C. Liu

研究成果: 雜誌貢獻會議論文同行評審

35 引文 斯高帕斯(Scopus)

摘要

Silicon carbide (SiC) based gas sensors have the ability to meet the needs of a range of aerospace applications including leak detection, environmental control, emission monitoring, and fire detection. While each of these applications require that the sensor and associated packaging be tailored for that individual application, they all require sensitive detection. The sensing approach taken to meet these needs is the use of SiC as a semiconductor in a Schottky diode configuration due to the demonstrated high sensitivity of Schottky diode-based sensors. However, Schottky diode structures require good control of the interface between the gas sensitive metal and SiC in order to meet required levels of sensitivity and stability. Two examples of effort to better control the SiC gas sensitive Schottky diode interface will be discussed. First, the use of chrome carbide as a barrier layer between the metal and SiC is discussed. Second, we report the first use of atomically flat SiC to provide an improved SiC semiconductor surface for gas sensor deposition. An example of the demonstration of a SiC gas sensor in an aerospace applications is given. It is concluded that, while significant progress has been made, the development of SiC gas sensor systems is still at a relatively early level of maturity for a number of applications.

原文???core.languages.en_GB???
頁(從 - 到)287-298
頁數12
期刊Materials Research Society Symposium - Proceedings
815
DOIs
出版狀態已出版 - 2004
事件Silicon Carbide 2004 - Materials, Processing and Devices - San Francisco, CA, United States
持續時間: 14 4月 200415 4月 2004

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