TY - JOUR
T1 - Development of SiC-based gas sensors for aerospace applications
AU - Hunter, G. W.
AU - Neudeck, P. G.
AU - Xu, J.
AU - Lukco, D.
AU - Trunek, A.
AU - Artale, M.
AU - Lampard, P.
AU - Androjna, D.
AU - Makel, D.
AU - Ward, B.
AU - Liu, C. C.
PY - 2004
Y1 - 2004
N2 - Silicon carbide (SiC) based gas sensors have the ability to meet the needs of a range of aerospace applications including leak detection, environmental control, emission monitoring, and fire detection. While each of these applications require that the sensor and associated packaging be tailored for that individual application, they all require sensitive detection. The sensing approach taken to meet these needs is the use of SiC as a semiconductor in a Schottky diode configuration due to the demonstrated high sensitivity of Schottky diode-based sensors. However, Schottky diode structures require good control of the interface between the gas sensitive metal and SiC in order to meet required levels of sensitivity and stability. Two examples of effort to better control the SiC gas sensitive Schottky diode interface will be discussed. First, the use of chrome carbide as a barrier layer between the metal and SiC is discussed. Second, we report the first use of atomically flat SiC to provide an improved SiC semiconductor surface for gas sensor deposition. An example of the demonstration of a SiC gas sensor in an aerospace applications is given. It is concluded that, while significant progress has been made, the development of SiC gas sensor systems is still at a relatively early level of maturity for a number of applications.
AB - Silicon carbide (SiC) based gas sensors have the ability to meet the needs of a range of aerospace applications including leak detection, environmental control, emission monitoring, and fire detection. While each of these applications require that the sensor and associated packaging be tailored for that individual application, they all require sensitive detection. The sensing approach taken to meet these needs is the use of SiC as a semiconductor in a Schottky diode configuration due to the demonstrated high sensitivity of Schottky diode-based sensors. However, Schottky diode structures require good control of the interface between the gas sensitive metal and SiC in order to meet required levels of sensitivity and stability. Two examples of effort to better control the SiC gas sensitive Schottky diode interface will be discussed. First, the use of chrome carbide as a barrier layer between the metal and SiC is discussed. Second, we report the first use of atomically flat SiC to provide an improved SiC semiconductor surface for gas sensor deposition. An example of the demonstration of a SiC gas sensor in an aerospace applications is given. It is concluded that, while significant progress has been made, the development of SiC gas sensor systems is still at a relatively early level of maturity for a number of applications.
UR - http://www.scopus.com/inward/record.url?scp=19944432655&partnerID=8YFLogxK
U2 - 10.1557/proc-815-j4.4
DO - 10.1557/proc-815-j4.4
M3 - 會議論文
AN - SCOPUS:19944432655
SN - 0272-9172
VL - 815
SP - 287
EP - 298
JO - Materials Research Society Symposium - Proceedings
JF - Materials Research Society Symposium - Proceedings
T2 - Silicon Carbide 2004 - Materials, Processing and Devices
Y2 - 14 April 2004 through 15 April 2004
ER -