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Determination of Suitable Indicators of AlGaN/GaN HEMT Wafer Quality Based on Wafer Test and Device Characteristics
Yi Nan Zhong, Shun Wei Tang,
Yue Ming Hsin
電機工程學系
光電科學研究中心
研究成果
:
雜誌貢獻
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期刊論文
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同行評審
4
引文 斯高帕斯(Scopus)
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Keyphrases
AlGaN-GaN
100%
GaN HEMT
100%
On-wafer Measurement
100%
Quality-oriented
100%
Device Characteristics
100%
Wafer Quality
100%
Band Edge
100%
Test Characteristics
100%
Wafer
50%
Blue Luminescence
50%
Carbon Concentration
50%
Yellow Luminescence
50%
Full Width at Half Maximum
25%
Diffraction Profile
25%
X Ray Diffraction
25%
Si Substrate
25%
Buffer Layer
25%
Hall Measurement
25%
Low Resistivity
25%
Photoluminescence Spectroscopy
25%
Secondary Ion Mass Spectrometry
25%
Growth Conditions
25%
Device Performance
25%
X-ray Diffraction Measurement
25%
On-state
25%
Current Collapse
25%
Channel Layer
25%
Drain Lag
25%
Current Transient
25%
Dynamic RON
25%
Epitaxial Wafer
25%
Low Carbon
25%
Edge Ratio
25%
Dynamic Current
25%
Engineering
Band Edge
100%
Wafer Quality
100%
Ray Diffraction
50%
Test Level
50%
Carbon Concentration
50%
Transients
25%
Growth Condition
25%
Device Performance
25%
Si Substrate
25%
Buffer Layer
25%
Channel Layer
25%
State Device
25%
Material Science
Transistor
100%
Electron Mobility
100%
Luminescence
100%
X-Ray Diffraction
50%
Photoluminescence
25%
Secondary Ion Mass Spectrometry
25%
Electrical Resistivity
25%