Determination of Suitable Indicators of AlGaN/GaN HEMT Wafer Quality Based on Wafer Test and Device Characteristics

Yi Nan Zhong, Shun Wei Tang, Yue Ming Hsin

研究成果: 雜誌貢獻期刊論文同行評審

摘要

This study investigates various tests on AlGaN/GaN high electron mobility transistor (HEMT) wafers, including photoluminescence spectroscopy, secondary ion mass spectroscopy, X-ray diffraction (XRD), and Hall measurement. The AlGaN/GaN HEMT wafers are grown on low-resistivity Si substrates with various growth conditions for the buffer and channel layers. Characteristics of AlGaN/GaN HEMTs including drain lag, dynamic RON, and current transients were measured and correlated with the results from the wafer level tests. Results indicate that epitaxial wafers with low yellow luminescence (YL) to band edge (BE) and blue luminescence (BL) to BE ratios as well as a low carbon concentration but a similar low full width at half maximum of XRD profiles can result in devices with significant suppression of current collapse and the same on-state device characteristics. Therefore, both YL/BE and BL/BE values combined with the carbon concentration in wafer level tests are suitable indicators for estimating device performance.

原文???core.languages.en_GB???
文章編號1700628
期刊Physica Status Solidi (A) Applications and Materials Science
215
發行號9
DOIs
出版狀態已出版 - 9 5月 2018

指紋

深入研究「Determination of Suitable Indicators of AlGaN/GaN HEMT Wafer Quality Based on Wafer Test and Device Characteristics」主題。共同形成了獨特的指紋。

引用此