Design of Low Voltage Vertical Channel Face-tunneling TFET Using Ge/SiGe Materials and Its SRAM Circuit Performance

Keyphrases

• Low Voltage 100%
• SiGe 100%
• Circuit Performance 100%
• Tunneling 100%
• Vertical Channel 100%
• SRAM Circuit 100%
• Drain Regions 33%
• Current Ratio 33%
• Tunneling Current 33%
• Low Power Applications 33%
• Leakage Current 33%
• Small Bandgap 33%
• On-state 33%
• Device Structure 33%
• Drive Current 33%
• Off-state Leakage Current 33%
• Subthreshold Slope 33%
• Ioff 33%
• Tunnel Field-effect Transistor 33%
• Read Disturb 33%

Engineering

• Tunnel Construction 100%
• Circuit Performance 100%
• Drain Region 33%
• Current Ratio 33%
• Field-Effect Transistor 33%
• Device Structure 33%
• Subthreshold Slope 33%
• Current Drive 33%
• Read Disturb 33%
• Channel Region 33%
• Band Gap 33%