@inproceedings{c5af34866ca047d292a8a87b9dae6bc1,
title = "Design of high-performance and highly reliable nMOSFETs with embedded Si:C S/D extension stressor(Si:C S/D-E)",
abstract = "A Novel strained nMOSFET with embedded Si:C in S/D extension stressor (Si:C S/D-E) was presented. Comparing to the bulk device, it revealed good drive current ION (+27%), high ID,sat current (+67%), enhanced channel mobility (+105%), at a lower effective substitutional carbon concentration (C%=1.1%), using the poly-gate 40nm-node Si:C/eSiGe S/D CMOS technology. Moreover, PBTI effect was first observed in this device as a result of Carbn impurity out-diffusion, which is of critically important for the design trade-off between performance and reliability.",
keywords = "CMOS, Embedded SiC, Positive temperature bias instability, Strained technology",
author = "Chung, {Steve S.} and Hsieh, {E. R.} and Liu, {P. W.} and Chiang, {W. T.} and Tsai, {S. H.} and Tsai, {T. L.} and Huang, {R. M.} and Tsai, {C. H.} and Teng, {W. Y.} and Li, {C. I.} and Kuo, {T. F.} and Wang, {Y. R.} and Yang, {C. L.} and Tsai, {C. T.} and Ma, {G. H.} and Chien, {S. C.} and Sun, {S. W.}",
year = "2009",
language = "???core.languages.en_GB???",
isbn = "9784863480094",
series = "Digest of Technical Papers - Symposium on VLSI Technology",
pages = "158--159",
booktitle = "2009 Symposium on VLSI Technology, VLSIT 2009",
note = "2009 Symposium on VLSI Technology, VLSIT 2009 ; Conference date: 16-06-2009 Through 18-06-2009",
}