TY - JOUR
T1 - Design of dual-band millimeter-wave antenna-in-package using flip-chip assembly
AU - Lin, Ta Yeh
AU - Chiu, Tsenchieh
AU - Chang, Da Chiang
PY - 2014/3
Y1 - 2014/3
N2 - A dual-band antenna-in-package for millimeter-wave (mmW) applications is presented in the paper. The proposed antenna, which consists of a radiating slot and an air-filled cavity, is fed by a microstrip loaded with two tuning open-circuited stubs through a coupling C-shape aperture to achieve dual-band characteristics. The air-filled cavity, which is formed by the space between CMOS chip and integrated passive device substrate after flip-chip assembly process, can reduce loss and improve antenna gain. Simulation and measurement regarding antenna reflection coefficient, radiation pattern, and peak gain are conducted for design validation. The measured results show that the antenna can operate in V-band and E-band, and the impedance bandwidths with the reflection coefficient less than -10 dB are 6.1% and 5.8%, respectively. The measured gains are -2 dBi at 58 GHz and 0.3 dBi at 77 GHz, respectively. The proposed antenna is well suited for dual-band mmW high-data-rate wireless communication systems.
AB - A dual-band antenna-in-package for millimeter-wave (mmW) applications is presented in the paper. The proposed antenna, which consists of a radiating slot and an air-filled cavity, is fed by a microstrip loaded with two tuning open-circuited stubs through a coupling C-shape aperture to achieve dual-band characteristics. The air-filled cavity, which is formed by the space between CMOS chip and integrated passive device substrate after flip-chip assembly process, can reduce loss and improve antenna gain. Simulation and measurement regarding antenna reflection coefficient, radiation pattern, and peak gain are conducted for design validation. The measured results show that the antenna can operate in V-band and E-band, and the impedance bandwidths with the reflection coefficient less than -10 dB are 6.1% and 5.8%, respectively. The measured gains are -2 dBi at 58 GHz and 0.3 dBi at 77 GHz, respectively. The proposed antenna is well suited for dual-band mmW high-data-rate wireless communication systems.
KW - CMOS process
KW - dual band
KW - flip-chip assembly
KW - integrated passive device (IPD) process
KW - millimeter wave (mmW)
KW - on-chip antenna
UR - http://www.scopus.com/inward/record.url?scp=84896346853&partnerID=8YFLogxK
U2 - 10.1109/TCPMT.2014.2300166
DO - 10.1109/TCPMT.2014.2300166
M3 - 期刊論文
AN - SCOPUS:84896346853
SN - 2156-3950
VL - 4
SP - 385
EP - 391
JO - IEEE Transactions on Components, Packaging and Manufacturing Technology
JF - IEEE Transactions on Components, Packaging and Manufacturing Technology
IS - 3
M1 - 6728718
ER -