TY - JOUR
T1 - Design of broadband highly linear IQ modulator using a 0.5 μm E/D-PHEMT process for millimeter-wave applications
AU - Chang, Hong Yeh
N1 - Funding Information:
Manuscript received January 22, 2008; revised February 12, 2008. This work was supported in part by the National Science Council of Taiwan, R.O.C., under Grant NSC 96-2221-E-008-117-MY3, Grant NSC 96-2221-E-008-119-, by WIN Semiconductors Corporation, and by the Chip Implementation Center (CIC), Taiwan.
PY - 2008/7
Y1 - 2008/7
N2 - A broadband highly linear IQ modulator using a 0.5-μm enhancement/depletion-pseudomorphic high-electron mobility transistor process is presented in this letter. An innovative broadside/edge coupler is proposed to apply to the IQ modulator. The chip size is only 1 × 1 mm2, including radio frequency and baseband PADs. The sideband and local oscillation suppressions of the modulator are better than -33 and -15 dBc, respectively. At a carrier frequency of 60 GHz with a 64 quadrature amplitude modulation (QAM) modulation, the modulator demonstrates an error vector magnitude of within 3%, and an adjacent channel power ratio of better than -40 dBc. To the best of the authors' knowledge, this work demonstrates the best modulation quality with a 64 QAM modulation up to 60 GHz among all the reported reflection-type IQ modulators.
AB - A broadband highly linear IQ modulator using a 0.5-μm enhancement/depletion-pseudomorphic high-electron mobility transistor process is presented in this letter. An innovative broadside/edge coupler is proposed to apply to the IQ modulator. The chip size is only 1 × 1 mm2, including radio frequency and baseband PADs. The sideband and local oscillation suppressions of the modulator are better than -33 and -15 dBc, respectively. At a carrier frequency of 60 GHz with a 64 quadrature amplitude modulation (QAM) modulation, the modulator demonstrates an error vector magnitude of within 3%, and an adjacent channel power ratio of better than -40 dBc. To the best of the authors' knowledge, this work demonstrates the best modulation quality with a 64 QAM modulation up to 60 GHz among all the reported reflection-type IQ modulators.
KW - Enhancement/depletion-pseudomorphic high-electron mobility transistor (E/D-PHEMT)
KW - Millimeter-wave (MMW)
KW - Quadrature amplitude modulator (QAM)
UR - http://www.scopus.com/inward/record.url?scp=46749121849&partnerID=8YFLogxK
U2 - 10.1109/LMWC.2008.924926
DO - 10.1109/LMWC.2008.924926
M3 - 期刊論文
AN - SCOPUS:46749121849
SN - 1531-1309
VL - 18
SP - 491
EP - 493
JO - IEEE Microwave and Wireless Components Letters
JF - IEEE Microwave and Wireless Components Letters
IS - 7
M1 - 4538235
ER -