Design of a DC-33 GHz cascode distributed amplifier using dual-gate device in 0.5-μm GaAs E/D-mode HEMT process

Si Hua Chen, Chih Chun Shen, Shou Hsien Weng, Yu Cheng Liu, Hong Yeh Chang, Yu Chi Wang

研究成果: 書貢獻/報告類型會議論文篇章同行評審

6 引文 斯高帕斯(Scopus)

摘要

Design of a DC-33 GHz cascode distributed amplifier (DA) using dual-gate device in 0.5-μm GaAs enhancement/depletion-mode (E/D-mode) high electron mobility transistor (HEMT) process is presented in this paper. A compact dual-gate HEMT is adopted in the gain cell of the DA. By using the dual-gate HEMT, the gain-bandwidth product of the DA can be further improved. The proposed DA achieves a small-signal gain of 10.6 dB, an output power 1-dB compress point (OP1dB) of 8.9 dBm, and a 3-dB bandwidth from dc to 33 GHz. The DA is also successfully evaluated using pseudorandom bit stream (PRBS) signal with a data rate up to 12-Gbps. The proposed dual-gate DA is suitable for the high-speed data rate transmission due to its superior performance.

原文???core.languages.en_GB???
主出版物標題2013 Asia-Pacific Microwave Conference Proceedings, APMC 2013
頁面728-730
頁數3
DOIs
出版狀態已出版 - 2013
事件2013 3rd Asia-Pacific Microwave Conference, APMC 2013 - Seoul, Korea, Republic of
持續時間: 5 11月 20138 11月 2013

出版系列

名字Asia-Pacific Microwave Conference Proceedings, APMC

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???event.eventtypes.event.conference???2013 3rd Asia-Pacific Microwave Conference, APMC 2013
國家/地區Korea, Republic of
城市Seoul
期間5/11/138/11/13

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