TY - JOUR
T1 - Design and analysis of ultra-high-speed near-ballistic uni-traveling- carrier photodiodes under a 50-Ω load for high-power performance
AU - Shi, Jin Wei
AU - Kuo, Feng Ming
AU - Bowers, John E.
N1 - Funding Information:
Manuscript received September 13, 2011; revised November 30, 2011; accepted December 7, 2011. Date of publication December 14, 2011; date of current version March 7, 2012. This work was supported in part by the National Science Council (NSC) of Taiwan under Grant NSC-100-2918-I-008-004 and in part by DARPA MTO PICO Project.
PY - 2012
Y1 - 2012
N2 - We demonstrate a near-ballistic uni-traveling-carrier photodiode (NBUTC-PD) with a scaled-down epi-layer structure designed for high-power performance in the sub-THz frequency regime. Compared with UTC-PDs, NBUTC-PDs offer a higher optimum bias voltage for the near-ballistic transport of electrons, which leads to improvement in the output power performance. Furthermore, a small load resistance (< 50Ω), which would sacrifice the output power for minimizing the output ac voltage swing on dc bias point, is not necessary. By scaling down the collector layer thickness and active area of the NBUTC-PDs, we achieve a large optical-to-electrical bandwidth (250 GHz) and a high saturation current (17 mA), which is close to the theoretical maximum, under a 50-Ω load and -2-V bias.
AB - We demonstrate a near-ballistic uni-traveling-carrier photodiode (NBUTC-PD) with a scaled-down epi-layer structure designed for high-power performance in the sub-THz frequency regime. Compared with UTC-PDs, NBUTC-PDs offer a higher optimum bias voltage for the near-ballistic transport of electrons, which leads to improvement in the output power performance. Furthermore, a small load resistance (< 50Ω), which would sacrifice the output power for minimizing the output ac voltage swing on dc bias point, is not necessary. By scaling down the collector layer thickness and active area of the NBUTC-PDs, we achieve a large optical-to-electrical bandwidth (250 GHz) and a high saturation current (17 mA), which is close to the theoretical maximum, under a 50-Ω load and -2-V bias.
KW - High-power photodiode
KW - photodiodes
KW - photonic transmitter
UR - http://www.scopus.com/inward/record.url?scp=84858024703&partnerID=8YFLogxK
U2 - 10.1109/LPT.2011.2179795
DO - 10.1109/LPT.2011.2179795
M3 - 期刊論文
AN - SCOPUS:84858024703
VL - 24
SP - 533
EP - 535
JO - IEEE Photonics Technology Letters
JF - IEEE Photonics Technology Letters
SN - 1041-1135
IS - 7
M1 - 6104356
ER -