TY - JOUR
T1 - Design and analysis of separate-absorption-transport-charge-multiplication traveling-wave avalanche photodetectors
AU - Shi, Jin Wei
AU - Liu, Yin Hsin
AU - Liu, Chee Wee
N1 - Funding Information:
Manuscript received May 29, 2003; revised February 4, 2004. This work was supported in part by the National Science Council of Taiwan under Grant NSC 92-2218-E-008-011.
PY - 2004/6
Y1 - 2004/6
N2 - This paper proposes a novel type of avalanche photodiode - the separate-absorption-transport-charge-multiplication (SATCM) avalanche photodiode (APD). The novel design of photoabsorption and multiplication layers of APDs can avoid the photoabsorption layer breakdown and hole-transport problems, exhibit low operation voltage, and achieve ultra-high-gain bandwidth product performances. To achieve low excess noise and ultra-high-speed performance in the fiber communication regime (1.3 ∼ 1.55 μm), the simulated APD is Si-based with an SiGe-Si superlattice (SL) as the photoabsorption layer and traveling-wave geometric structures. The frequency response is simulated by means of a photo-distributed current model, which includes all the bandwidth-limiting factors, such as the dispersion of microwave propagation loss, velocity mismatch, boundary reflection, and multiplication/transport of photogenerated carriers. By properly choosing the thicknesses of the transport and multiplication layers, microwave propagation effects in the traveling-wave structure can be minimized without increasing the operation voltage significantly. A near 30-Gb/s electrical bandwidth and 10 × avalanche gain can be achieved simultaneously, even with a long device absorption length (150 μm) and low operation voltage (∼ 12 V). In addition, the ultrahigh output saturation power bandwidth product of this simulated TWAPD structure can also be expected due to the large photoabsorption volume and superior microwave-guiding structure.
AB - This paper proposes a novel type of avalanche photodiode - the separate-absorption-transport-charge-multiplication (SATCM) avalanche photodiode (APD). The novel design of photoabsorption and multiplication layers of APDs can avoid the photoabsorption layer breakdown and hole-transport problems, exhibit low operation voltage, and achieve ultra-high-gain bandwidth product performances. To achieve low excess noise and ultra-high-speed performance in the fiber communication regime (1.3 ∼ 1.55 μm), the simulated APD is Si-based with an SiGe-Si superlattice (SL) as the photoabsorption layer and traveling-wave geometric structures. The frequency response is simulated by means of a photo-distributed current model, which includes all the bandwidth-limiting factors, such as the dispersion of microwave propagation loss, velocity mismatch, boundary reflection, and multiplication/transport of photogenerated carriers. By properly choosing the thicknesses of the transport and multiplication layers, microwave propagation effects in the traveling-wave structure can be minimized without increasing the operation voltage significantly. A near 30-Gb/s electrical bandwidth and 10 × avalanche gain can be achieved simultaneously, even with a long device absorption length (150 μm) and low operation voltage (∼ 12 V). In addition, the ultrahigh output saturation power bandwidth product of this simulated TWAPD structure can also be expected due to the large photoabsorption volume and superior microwave-guiding structure.
UR - http://www.scopus.com/inward/record.url?scp=3142709945&partnerID=8YFLogxK
U2 - 10.1109/JLT.2004.829230
DO - 10.1109/JLT.2004.829230
M3 - 期刊論文
AN - SCOPUS:3142709945
SN - 0733-8724
VL - 22
SP - 1583
EP - 1590
JO - Journal of Lightwave Technology
JF - Journal of Lightwave Technology
IS - 6
ER -