Design and analysis of monolithic triple-stacked power amplifiers using GaAs HBT-HEMT process

Physics & Astronomy

• power amplifiers 98%
• bipolar transistors 90%
• high electron mobility transistors 86%
• heterojunctions 73%
• configurations 44%
• emitters 34%
• transistors 33%
• output 24%
• power efficiency 24%
• amplifiers 16%
• chips 16%
• impedance 15%
• bandwidth 14%
• performance 9%

Engineering & Materials Science

• Heterojunction bipolar transistors 99%
• High electron mobility transistors 96%
• Power amplifiers 82%
• Gates (transistor) 59%
• Power transistors 27%
• Transistors 17%
• Acoustic impedance 15%
• Bandwidth 13%

Chemical Compounds

• Electron Mobility 100%