Design and analysis of two high-speed high dynamic-range track-and-hold amplifiers are presented in this paper using 65-and 90-nm CMOS processes. To achieve remarkable circuit performance in the advanced CMOS regime, the cascode topology with an inductive peaking technique and the distributed topology are employed in the track-and-hold amplifiers. The circuit topology is investigated to obtain the design methodology of the CMOS high-speed high dynamic-range track-and-hold amplifier. The theoretical calculation is presented to completely verify the design concept. Moreover, the proposed CMOS track-and-hold amplifiers demonstrate wide bandwidth and good linearity. With a dc power consumption of 197 mW, the 65-nm CMOS track-and-hold amplifier features an input bandwidth of up to 7 GHz, a spurious-free dynamic range (SFDR) of 44.6 dB, and a total harmonic distortion (THD) of-44.5 dB. With a dc power consumption of 216 mW, the 90-nm CMOS track-and-hold amplifier features an input bandwidth of 19 GHz, an SFDR of 47.5 dB, and a THD of-44.5 dB}. The proposed CMOS track-and-hold amplifiers are suitable for the high-resolution high-speed analog-to-digital converter with low dc supply voltage and power.
|頁（從 - 到）||2841-2853|
|期刊||IEEE Transactions on Microwave Theory and Techniques|
|出版狀態||已出版 - 1 9月 2015|