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Deposition of high-quality Ge film on Si by PECVD using GeCl
4
/H
2
for fabricating near-infrared photodiodes
Jyun You Lai
, Shang Che Tsai
, Ming Wei Lin
,
Szu yuan Chen
物理學系
研究成果
:
雜誌貢獻
›
期刊論文
›
同行評審
6
引文 斯高帕斯（Scopus）
總覽
指紋
指紋
深入研究「Deposition of high-quality Ge film on Si by PECVD using GeCl
4
/H
2
for fabricating near-infrared photodiodes」主題。共同形成了獨特的指紋。
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Keyphrases
Atomic Layer Deposition
33%
Buffer Layer
33%
Dark Current Density
33%
Direct Deposition
33%
Electronic Circuit
33%
Fabrication Methods
33%
Ge Film
100%
Impurity-free
33%
Low Dark Current
33%
Low-temperature Fabrication
33%
Monocrystalline
33%
Monolithic Integration
33%
Near-infrared Photodiodes
100%
Optoelectronic Components
33%
Photodiode
33%
Plasma-enhanced Chemical Vapor Deposition (PECVD)
100%
Post-annealing
33%
Responsivity
33%
Si Photodiode
33%
Si Substrate
33%
Si-based
33%
SiGe
33%
Substrate Temperature
33%
Surface Roughness
33%
Tensile Strain
33%
Threading Dislocation Density
33%
Engineering
Atomic Layer Deposition
25%
Buffer Layer
25%
Chemical Vapor Deposition
100%
Dislocation Density
25%
Fabrication Method
25%
Low-Temperature
25%
Monocrystalline
25%
Monolithic Integration
25%
Networks (Circuits)
25%
Optoelectronics
25%
Photodiode
100%
Responsivity
25%
Si Substrate
25%
Substrate Temperature
25%
Tensiles
25%
Threading Dislocation
25%
Vapor Deposition
100%
Material Science
Annealing
33%
Buffer Layer
33%
Density
66%
Electronic Circuit
33%
Film
100%
Nucleation
33%
Plasma-Enhanced Chemical Vapor Deposition
100%
Surface Roughness
33%
Chemical Engineering
Atomic Layer Deposition
33%
Film
100%
Plasma Enhanced Chemical Vapor Deposition
100%