Demonstration of photoluminescence in nonanodized silicon

J. Sarathy; S. Shih; Kim Jung; C. Tsai; K. H. Li; D. L. Kwong; J. C. Campbell; Shueh Lin Yau; A. J. Bard

doi:10.1063/1.107242

Demonstration of photoluminescence in nonanodized silicon

J. Sarathy, S. Shih, Kim Jung, C. Tsai, K. H. Li, D. L. Kwong, J. C. Campbell, Shueh Lin Yau, A. J. Bard

化學學系

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

91 引文斯高帕斯（Scopus）

摘要

The formation of photoluminescent porous Si in an etchant solution made from the HF-HNO₃-CH₃COOH system is reported. The porous Si is characterized on the basis of its photoluminescence (PL) spectra and the degradation of the PL during exposure to laser irradiation. The surface topography as characterized by atomic force microscopy (AFM) reveals features on the order of 400-600 Å. The effect of annealing the porous Si in vacuum on the PL intensity is described and correlated to the breakdown of Si - H bonds on the porous Si surface.

原文	???core.languages.en_GB???
頁（從 - 到）	1532-1534
頁數	3
期刊	Applied Physics Letters
卷	60
發行號	13
DOIs	https://doi.org/10.1063/1.107242
出版狀態	已出版 - 1992

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10.1063/1.107242

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abstract = "The formation of photoluminescent porous Si in an etchant solution made from the HF-HNO3-CH3COOH system is reported. The porous Si is characterized on the basis of its photoluminescence (PL) spectra and the degradation of the PL during exposure to laser irradiation. The surface topography as characterized by atomic force microscopy (AFM) reveals features on the order of 400-600 {\AA}. The effect of annealing the porous Si in vacuum on the PL intensity is described and correlated to the breakdown of Si - H bonds on the porous Si surface.",

author = "J. Sarathy and S. Shih and Kim Jung and C. Tsai and Li, {K. H.} and Kwong, {D. L.} and Campbell, {J. C.} and Yau, {Shueh Lin} and Bard, {A. J.}",

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T1 - Demonstration of photoluminescence in nonanodized silicon

AU - Sarathy, J.

AU - Shih, S.

AU - Jung, Kim

AU - Tsai, C.

AU - Li, K. H.

AU - Kwong, D. L.

AU - Campbell, J. C.

AU - Yau, Shueh Lin

AU - Bard, A. J.

PY - 1992

Y1 - 1992

N2 - The formation of photoluminescent porous Si in an etchant solution made from the HF-HNO3-CH3COOH system is reported. The porous Si is characterized on the basis of its photoluminescence (PL) spectra and the degradation of the PL during exposure to laser irradiation. The surface topography as characterized by atomic force microscopy (AFM) reveals features on the order of 400-600 Å. The effect of annealing the porous Si in vacuum on the PL intensity is described and correlated to the breakdown of Si - H bonds on the porous Si surface.

AB - The formation of photoluminescent porous Si in an etchant solution made from the HF-HNO3-CH3COOH system is reported. The porous Si is characterized on the basis of its photoluminescence (PL) spectra and the degradation of the PL during exposure to laser irradiation. The surface topography as characterized by atomic force microscopy (AFM) reveals features on the order of 400-600 Å. The effect of annealing the porous Si in vacuum on the PL intensity is described and correlated to the breakdown of Si - H bonds on the porous Si surface.

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U2 - 10.1063/1.107242

DO - 10.1063/1.107242

M3 - 期刊論文

AN - SCOPUS:0000254059

VL - 60

SP - 1532

EP - 1534

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 13

ER -

Demonstration of photoluminescence in nonanodized silicon

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