Demonstration of a dual-depletion-region electroabsorption modulator at 1.55-μm wavelength for high-speed and low-driving-voltage performance

J. W. Shi, C. A. Hsieh, A. C. Shiao, Y. S. Wu, F. H. Huang, S. H. Chen, Y. T. Tsai, J. I. Chyi

研究成果: 雜誌貢獻期刊論文同行評審

15 引文 斯高帕斯(Scopus)

摘要

We demonstrate a novel structure of electroabsorption modulator (EAM) at a 1.55-μm wavelength: the dual-depletion-region EAM. After an n+ delta-doped layer was inserted into the thick intrinsic region (550 nm) of a tradition p-i-n modulator, the tradeoff between driving-voltage and electrical bandwidth performance can be released effectively. This new structure can also release the burden imposed on downscaling the width or length of high-speed EAM with low driving-voltage performance. The microwave and electrical-to-optical measurement of this novel device with traveling-wave electrodes show very convincing results.

原文???core.languages.en_GB???
頁(從 - 到)2068-2070
頁數3
期刊IEEE Photonics Technology Letters
17
發行號10
DOIs
出版狀態已出版 - 10月 2005

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