Delta-ray production in silicon tracking systems for 2-50 GeV electrons

S. R. Hou; G. Ambrosi; W. J. Burger; Y. H. Chang; A. E. Chen; W. T. Lin; N. Produit; M. Ribordy

doi:10.1016/S0168-9002(98)00728-1

Delta-ray production in silicon tracking systems for 2-50 GeV electrons

S. R. Hou, G. Ambrosi, W. J. Burger, Y. H. Chang, A. E. Chen, W. T. Lin, N. Produit, M. Ribordy

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

2 引文斯高帕斯（Scopus）

摘要

The production of δ-ray electrons in silicon strip tracking systems is measured for electrons in the energy range of 2-50 GeV. The results are compared to GEANT calculations. The production cutoff threshold is calibrated, and a value of T_cut = 500 keV is chosen. The δ-ray angular distribution is measured for electrons transmitting through a 320 μm silicon wafer. The δ-ray production rate is approximately 1.3% within an angular region of 1-50 mrad.

原文	???core.languages.en_GB???
頁（從 - 到）	145-153
頁數	9
期刊	Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
卷	418
發行號	1
DOIs	https://doi.org/10.1016/S0168-9002(98)00728-1
出版狀態	已出版 - 21 11月 1998

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10.1016/S0168-9002(98)00728-1

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Hou, S. R., Ambrosi, G., Burger, W. J., Chang, Y. H., Chen, A. E., Lin, W. T., Produit, N., & Ribordy, M. (1998). Delta-ray production in silicon tracking systems for 2-50 GeV electrons. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 418(1), 145-153. https://doi.org/10.1016/S0168-9002(98)00728-1

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title = "Delta-ray production in silicon tracking systems for 2-50 GeV electrons",

abstract = "The production of δ-ray electrons in silicon strip tracking systems is measured for electrons in the energy range of 2-50 GeV. The results are compared to GEANT calculations. The production cutoff threshold is calibrated, and a value of Tcut = 500 keV is chosen. The δ-ray angular distribution is measured for electrons transmitting through a 320 μm silicon wafer. The δ-ray production rate is approximately 1.3% within an angular region of 1-50 mrad.",

author = "Hou, {S. R.} and G. Ambrosi and Burger, {W. J.} and Chang, {Y. H.} and Chen, {A. E.} and Lin, {W. T.} and N. Produit and M. Ribordy",

note = "Funding Information: We are grateful to the CERN SPS staff for the excellent beam quality and technical assistance. This study was partially supported by the National Science Council of Taiwan R.O.C. (NSC85-2112-M-008-024).",

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Hou, SR, Ambrosi, G, Burger, WJ, Chang, YH, Chen, AE, Lin, WT, Produit, N & Ribordy, M 1998, 'Delta-ray production in silicon tracking systems for 2-50 GeV electrons', Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 卷 418, 編號 1, 頁 145-153. https://doi.org/10.1016/S0168-9002(98)00728-1

TY - JOUR

T1 - Delta-ray production in silicon tracking systems for 2-50 GeV electrons

AU - Hou, S. R.

AU - Ambrosi, G.

AU - Burger, W. J.

AU - Chang, Y. H.

AU - Chen, A. E.

AU - Lin, W. T.

AU - Produit, N.

AU - Ribordy, M.

N1 - Funding Information: We are grateful to the CERN SPS staff for the excellent beam quality and technical assistance. This study was partially supported by the National Science Council of Taiwan R.O.C. (NSC85-2112-M-008-024).

PY - 1998/11/21

Y1 - 1998/11/21

N2 - The production of δ-ray electrons in silicon strip tracking systems is measured for electrons in the energy range of 2-50 GeV. The results are compared to GEANT calculations. The production cutoff threshold is calibrated, and a value of Tcut = 500 keV is chosen. The δ-ray angular distribution is measured for electrons transmitting through a 320 μm silicon wafer. The δ-ray production rate is approximately 1.3% within an angular region of 1-50 mrad.

AB - The production of δ-ray electrons in silicon strip tracking systems is measured for electrons in the energy range of 2-50 GeV. The results are compared to GEANT calculations. The production cutoff threshold is calibrated, and a value of Tcut = 500 keV is chosen. The δ-ray angular distribution is measured for electrons transmitting through a 320 μm silicon wafer. The δ-ray production rate is approximately 1.3% within an angular region of 1-50 mrad.

UR - http://www.scopus.com/inward/record.url?scp=0032205369&partnerID=8YFLogxK

U2 - 10.1016/S0168-9002(98)00728-1

DO - 10.1016/S0168-9002(98)00728-1

M3 - 期刊論文

AN - SCOPUS:0032205369

SN - 0168-9002

VL - 418

SP - 145

EP - 153

JO - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

JF - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

IS - 1

ER -

Delta-ray production in silicon tracking systems for 2-50 GeV electrons

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