@inproceedings{10dd26b3815c4361b02016a4e3207e37,
title = "Deep insights into Interface Effects to achieve Low-voltage Operation (<1.2V), Low Process Temperature, and First-Principle Calculation",
abstract = "To address the strategy of interface effects to achieve low-voltage operation in ferroelectric devices, this work presents a systematical study on Hf0.5Zr0.5O2 ferroelectric(FE) capacitors. Firstly, by detail electrical characterization of P-V curves under varied electrodes and ambient gas, two factors governed ferroelectric switching can be well distinguished. Then by combining the kinetical pulse measurements and first-principle calculation, it is found that, 1) the intrinsic dead-layer effect exits in nanocapacitors; 2) the ferroelectric domain switching speed and coherency can be boosted via lower thermal budget O2 treatment. Finally, a material with coherency and ultra-low access voltage as design guideline for sub-3nm technology eNVM is provided.",
keywords = "Domain coherent switching, NLS, interfacial dead layer",
author = "Tang, {Y. T.} and Wu, {T. M.} and Fan, {C. L.} and Lai, {Y. M.} and Hsiang, {K. Y.} and Liao, {C. Y.} and Chang, {S. H.} and Yu, {T. Y.} and P. Su and Chang, {M. T.} and Huang, {B. H.} and C. Hu and Chang, {S. J.} and Chang, {M. F.} and Lee, {M. H.}",
note = "Publisher Copyright: {\textcopyright} 2021 IEEE.; 2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021 ; Conference date: 25-08-2021 Through 27-08-2021",
year = "2021",
month = aug,
day = "25",
doi = "10.1109/RFIT52905.2021.9565279",
language = "???core.languages.en_GB???",
series = "2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021",
}