Decoupling free-carriers contributions from oxygen-vacancy and cation-substitution in extrinsic conducting oxides

Y. H. Lin; Y. S. Liu; Y. C. Lin; Y. S. Wei; K. S. Liao; K. R. Lee; J. Y. Lai; H. M. Chen; Y. C. Jean; C. Y. Liu

doi:10.1063/1.4776781

Decoupling free-carriers contributions from oxygen-vacancy and cation-substitution in extrinsic conducting oxides

Y. H. Lin, Y. S. Liu, Y. C. Lin, Y. S. Wei, K. S. Liao, K. R. Lee, J. Y. Lai, H. M. Chen, Y. C. Jean, C. Y. Liu

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

7 引文斯高帕斯（Scopus）

摘要

The intrinsic oxygen-vacancies and the extrinsic dopants are two major fundamental free-carrier sources for the extrinsic conducting oxides, such as Sn-doped In₂O₃. Yet, the individual contributions of the above two free-carrier sources to the total carrier concentrations have never been unraveled. A carrier-concentration separation model is derived in this work, which can define the individual contributions to the total carrier concentration from the intrinsic oxygen-vacancies and the extrinsic dopants, separately. The individual contributions obtained from the present carrier-concentration separation model are verified by the two-state trapping model, photoluminescence, and positron annihilation lifetime (PAL) spectroscopy. In addition, the oxygen-vacancy formation energy of the Sn:In₂O ₃ thin film is determined to be 0.25 eV by PAL spectroscopy.

原文	???core.languages.en_GB???
文章編號	033706
期刊	Journal of Applied Physics
卷	113
發行號	3
DOIs	https://doi.org/10.1063/1.4776781
出版狀態	已出版 - 21 1月 2013

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10.1063/1.4776781

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title = "Decoupling free-carriers contributions from oxygen-vacancy and cation-substitution in extrinsic conducting oxides",

abstract = "The intrinsic oxygen-vacancies and the extrinsic dopants are two major fundamental free-carrier sources for the extrinsic conducting oxides, such as Sn-doped In2O3. Yet, the individual contributions of the above two free-carrier sources to the total carrier concentrations have never been unraveled. A carrier-concentration separation model is derived in this work, which can define the individual contributions to the total carrier concentration from the intrinsic oxygen-vacancies and the extrinsic dopants, separately. The individual contributions obtained from the present carrier-concentration separation model are verified by the two-state trapping model, photoluminescence, and positron annihilation lifetime (PAL) spectroscopy. In addition, the oxygen-vacancy formation energy of the Sn:In2O 3 thin film is determined to be 0.25 eV by PAL spectroscopy.",

author = "Lin, {Y. H.} and Liu, {Y. S.} and Lin, {Y. C.} and Wei, {Y. S.} and Liao, {K. S.} and Lee, {K. R.} and Lai, {J. Y.} and Chen, {H. M.} and Jean, {Y. C.} and Liu, {C. Y.}",

note = "Funding Information: This work was supported in part by the National Central University's Plan to Develop First-class Universities, a Top-level Research Centers Grant (100G903-2), and grants from the National Science Council (NSC 101-2221-E-008-036-MY3 and NSC 101-3113-E-008-001).",

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doi = "10.1063/1.4776781",

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T1 - Decoupling free-carriers contributions from oxygen-vacancy and cation-substitution in extrinsic conducting oxides

AU - Lin, Y. H.

AU - Liu, Y. S.

AU - Lin, Y. C.

AU - Wei, Y. S.

AU - Liao, K. S.

AU - Lee, K. R.

AU - Lai, J. Y.

AU - Chen, H. M.

AU - Jean, Y. C.

AU - Liu, C. Y.

N1 - Funding Information: This work was supported in part by the National Central University's Plan to Develop First-class Universities, a Top-level Research Centers Grant (100G903-2), and grants from the National Science Council (NSC 101-2221-E-008-036-MY3 and NSC 101-3113-E-008-001).

PY - 2013/1/21

Y1 - 2013/1/21

N2 - The intrinsic oxygen-vacancies and the extrinsic dopants are two major fundamental free-carrier sources for the extrinsic conducting oxides, such as Sn-doped In2O3. Yet, the individual contributions of the above two free-carrier sources to the total carrier concentrations have never been unraveled. A carrier-concentration separation model is derived in this work, which can define the individual contributions to the total carrier concentration from the intrinsic oxygen-vacancies and the extrinsic dopants, separately. The individual contributions obtained from the present carrier-concentration separation model are verified by the two-state trapping model, photoluminescence, and positron annihilation lifetime (PAL) spectroscopy. In addition, the oxygen-vacancy formation energy of the Sn:In2O 3 thin film is determined to be 0.25 eV by PAL spectroscopy.

AB - The intrinsic oxygen-vacancies and the extrinsic dopants are two major fundamental free-carrier sources for the extrinsic conducting oxides, such as Sn-doped In2O3. Yet, the individual contributions of the above two free-carrier sources to the total carrier concentrations have never been unraveled. A carrier-concentration separation model is derived in this work, which can define the individual contributions to the total carrier concentration from the intrinsic oxygen-vacancies and the extrinsic dopants, separately. The individual contributions obtained from the present carrier-concentration separation model are verified by the two-state trapping model, photoluminescence, and positron annihilation lifetime (PAL) spectroscopy. In addition, the oxygen-vacancy formation energy of the Sn:In2O 3 thin film is determined to be 0.25 eV by PAL spectroscopy.

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Decoupling free-carriers contributions from oxygen-vacancy and cation-substitution in extrinsic conducting oxides

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