DC characteristics of AZO/GaN heterojunction bipolar transistors

C. T. Pan; R. J. Hou; Y. M. Hsin; H. C. Chiu

doi:10.1049/el:20093076

DC characteristics of AZO/GaN heterojunction bipolar transistors

C. T. Pan
, R. J. Hou
, Y. M. Hsin
, H. C. Chiu

電機工程學系

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

2 引文斯高帕斯（Scopus）

摘要

A new npn Al-doped zinc oxide (AZO)/GaN heterojunction bipolar transistor (HBT) is presented. The fabricated HBT with an emitter size of 120×120m² exhibits a current gain of 5.8 at V _BE=3.0V. The anomalous high current gain is observed at low current level due to the leakage current. The common-emitter output characteristics demonstrate DC current gain of 1.2. In addition, improved device characteristics are observed after the P₂S₅/(NH₄)₂S treatment.

原文	???core.languages.en_GB???
頁（從 - 到）	230-231
頁數	2
期刊	Electronics Letters
卷	45
發行號	4
DOIs	https://doi.org/10.1049/el:20093076
出版狀態	已出版 - 2009

存取文件

10.1049/el:20093076

引用此

@article{5950a5fb44c345a8bae7d53311901987,

title = "DC characteristics of AZO/GaN heterojunction bipolar transistors",

abstract = "A new npn Al-doped zinc oxide (AZO)/GaN heterojunction bipolar transistor (HBT) is presented. The fabricated HBT with an emitter size of 120×120m2 exhibits a current gain of 5.8 at V BE=3.0V. The anomalous high current gain is observed at low current level due to the leakage current. The common-emitter output characteristics demonstrate DC current gain of 1.2. In addition, improved device characteristics are observed after the P2S5/(NH4)2S treatment.",

author = "Pan, \{C. T.\} and Hou, \{R. J.\} and Hsin, \{Y. M.\} and Chiu, \{H. C.\}",

year = "2009",

doi = "10.1049/el:20093076",

language = "???core.languages.en\_GB???",

volume = "45",

pages = "230--231",

journal = "Electronics Letters",

issn = "0013-5194",

number = "4",

}

TY - JOUR

T1 - DC characteristics of AZO/GaN heterojunction bipolar transistors

AU - Pan, C. T.

AU - Hou, R. J.

AU - Hsin, Y. M.

AU - Chiu, H. C.

PY - 2009

Y1 - 2009

N2 - A new npn Al-doped zinc oxide (AZO)/GaN heterojunction bipolar transistor (HBT) is presented. The fabricated HBT with an emitter size of 120×120m2 exhibits a current gain of 5.8 at V BE=3.0V. The anomalous high current gain is observed at low current level due to the leakage current. The common-emitter output characteristics demonstrate DC current gain of 1.2. In addition, improved device characteristics are observed after the P2S5/(NH4)2S treatment.

AB - A new npn Al-doped zinc oxide (AZO)/GaN heterojunction bipolar transistor (HBT) is presented. The fabricated HBT with an emitter size of 120×120m2 exhibits a current gain of 5.8 at V BE=3.0V. The anomalous high current gain is observed at low current level due to the leakage current. The common-emitter output characteristics demonstrate DC current gain of 1.2. In addition, improved device characteristics are observed after the P2S5/(NH4)2S treatment.

UR - https://www.scopus.com/pages/publications/60249093450

U2 - 10.1049/el:20093076

DO - 10.1049/el:20093076

M3 - 期刊論文

AN - SCOPUS:60249093450

SN - 0013-5194

VL - 45

SP - 230

EP - 231

JO - Electronics Letters

JF - Electronics Letters

IS - 4

ER -

DC characteristics of AZO/GaN heterojunction bipolar transistors

摘要

存取文件

指紋

引用此