DC Characteristics and Low-Frquency Noise of AlGaN/GaN HEMTs with Different Gate-to-Source Lengths

Keyphrases

• AlGaN-GaN 100%
• GaN HEMT 100%
• DC Characteristics 100%
• Generation-recombination Noise 100%
• Drain Current 50%
• Activation Energy 50%
• Low-frequency Noise 50%
• High Transconductance 50%
• Threshold Voltage 50%
• Low Frequency Noise Measurements 50%
• Noise Characteristics 50%
• GaN Buffer 50%
• Carrier number Fluctuations 50%
• Noise Spectral Density 50%
• Flicker Noise 50%
• Dominant Cause 50%

Engineering

• Frequency Noise 100%
• Activation Energy 50%
• Current Drain 50%
• Buffer Layer 50%
• Flicker Noise 50%
• Noise Power Spectral Density 50%