DC Characteristics and Low-Frquency Noise of AlGaN/GaN HEMTs with Different Gate-to-Source Lengths

Engineering

• Frequency Noise 100%
• Transistor 100%
• Activation Energy 50%
• Current Drain 50%
• Buffer Layer 50%
• Flicker Noise 50%
• Noise Power Spectral Density 50%

Keyphrases

• GaN Buffer Layer 50%