@inproceedings{e413d4ce7fe84c8bba7b6ccf18b5a313,
title = "DC and RF characteristics of type II lineup InAs/AlSb HFETs",
abstract = "Growth, fabrication, and characterization for a type II lineup InAs/AlSb HFET are presented. An as-grown epitaxy wafer with a 300K mobility of 21,300 cm2/V-s and an electron sheet concentration of 1.4×10 12 cm-2 was processed into devices. Peak transconductance of 720 mS/mm and drain current of 650mA/mm at drain voltage of 1.0V are achieved in a 1-μm gate length device. It is observed strong drain bias dependence of both DC drain currents and transconductances, on-state bell-shaped peaks in the gate leakage, and a large dispersion between DC and RF transconductances. Strong impact ionization along with no hole confinement in the InAs channel are suggested attributions for these phenomena.",
author = "Lin, {Heng Kuang} and Lin, {Yu Chao} and Fan, {Ta Wei} and Chiu, {Pei Chin} and Chen, {Shu Han} and Chyi, {Jen Inn} and Ko, {Chih Hsin} and Kuan, {Ta Ming} and Hsieh, {Meng Kuei} and Lee, {Wen Chin} and Wann, {Clement H.}",
year = "2008",
doi = "10.1109/APMC.2008.4958634",
language = "???core.languages.en_GB???",
isbn = "9781424426423",
series = "Proceedings of 2008 Asia Pacific Microwave Conference, APMC 2008",
booktitle = "Proceedings of 2008 Asia Pacific Microwave Conference, APMC 2008",
note = "2008 Asia Pacific Microwave Conference, APMC 2008 ; Conference date: 16-12-2008 Through 20-12-2008",
}