DC and RF characteristics of InAs-channel MOS-MODFETs using PECVD SiO 2 as gate dielectrics

Han Chieh Ho, Ta Wei Fan, Geng Ying Liau, Heng Kuang Lin, Pei Chin Chiu, Jen Inn Chyi, Chih Hsin Ko, Ta Ming Kuan, Meng Kuei Hsieh, Wen Chin Lee, Clement H. Wann

研究成果: 書貢獻/報告類型會議論文篇章同行評審

摘要

Small-bandgap InAs channel materials are potential candidates for high-speed and low-power applications and have been demonstrated in AlSb/InAs/AlSb QWFETs. Taking advantage of their excellent transport properties, we successfully develop an InAs-channel metal-oxide-semiconductor modulation-doped field-effect transistor (MOS-MODFET) using 100-nm PECVD-deposited SiO2 dielectrics for gate dielectrics. A 2μm-gate-length depletion-mode InAs n-channel MOS-MODFET shows a maximum drain current of 270 mA/mm, a peak transconductance of 189 mS/mm, and a low output conductance of 18 mS/mm in dc characteristics, and a maximum current-gain cut-off frequency of 14.5 GHz and a maximum oscillation frequency of 24.0 GHz in rf performances. The InAs-channel MOS-MODFET presents potentials for further developing complementary circuit devices.

原文???core.languages.en_GB???
主出版物標題2010 International Conference on Indium Phosphide and Related Materials, 22nd IPRM - Conference Proceedings
頁面508-511
頁數4
DOIs
出版狀態已出版 - 2010
事件22nd International Conference on Indium Phosphide and Related Materials, IPRM 2010 - Kagawa, Japan
持續時間: 31 5月 20104 6月 2010

出版系列

名字Conference Proceedings - International Conference on Indium Phosphide and Related Materials
ISSN(列印)1092-8669

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???event.eventtypes.event.conference???22nd International Conference on Indium Phosphide and Related Materials, IPRM 2010
國家/地區Japan
城市Kagawa
期間31/05/104/06/10

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