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D.c. and microwave characteristics of In
0.32
Al
0.68
As/In
0.33
Ga
0.67
As heterojunction bipolar transistors grown on GaAs
Hann Ping Hwang, Jia Lin Shieh,
Jen Inn Chyi
電機工程學系
研究成果
:
雜誌貢獻
›
期刊論文
›
同行評審
8
引文 斯高帕斯(Scopus)
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指紋
指紋
深入研究「D.c. and microwave characteristics of In
0.32
Al
0.68
As/In
0.33
Ga
0.67
As heterojunction bipolar transistors grown on GaAs」主題。共同形成了獨特的指紋。
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Keyphrases
Gallium Arsenide
100%
Heterojunction Bipolar Transistors
100%
Microwave Characteristics
100%
Collector Current
66%
DC Characteristics
33%
Current Gain
33%
Current Density
33%
Cm(III)
33%
On-state Current
33%
Turn-on Voltage
33%
Lattice Mismatch
33%
Breakdown Voltage
33%
Size Dependence
33%
Threading Dislocation
33%
BVCEO
33%
Fmax
33%
Junction Device
33%
Step Graded
33%
InxGa1-xAs
33%
Ledge
33%
Graded Junction
33%
Common Emitter Current Gain
33%
Engineering
Gallium Arsenide
100%
Heterojunctions
100%
Bipolar Transistor
100%
Current Gain
66%
Current Collector
66%
Breakdown Voltage
33%
Lattice Mismatch
33%
Threading Dislocation
33%
Collector Junction
33%
Material Science
Gallium Arsenide
100%
Heterojunction
100%
Bipolar Transistor
100%
Density
33%
Lattice Mismatch
33%
Earth and Planetary Sciences
Heterojunctions
100%
Emitter
100%
Bipolar Transistor
100%
Current Density
20%
Physics
Bipolar Transistor
100%
Heterojunctions
100%
Lattice Mismatch
33%