@inproceedings{dd5a1a59aafc421e85459134b1cb6985,
title = "DC and AC characteristics of HBTs with different base width",
abstract = "This paper discusses the dc and ac characteristics of InGaP/GaAs HBTs with different base width from 1.2 μm to 2.0 μm. There is no significant difference on dc current gain, common-emitter IV characteristics and f T performance due to the identical emitter layout. However, HBT with 1.2 μm base width demonstrated lowest fMAX. This is due to the limits on base current flowing in the 1.2 μm base width, where f MAX is dominated by RB instead of CBC.",
author = "Wang, {Che Ming} and Hsin, {Yue Ming}",
year = "2005",
doi = "10.1109/ICIPRM.2005.1517452",
language = "???core.languages.en_GB???",
isbn = "0780388917",
series = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",
pages = "185--187",
booktitle = "2005 International Conference on Indium Phosphide and Related Materials",
note = "2005 International Conference on Indium Phosphide and Related Materials ; Conference date: 08-05-2005 Through 12-05-2005",
}