Damage of silicon induced in low-energy CF4 discharges

F. Y. Chen, Lin I

研究成果: 雜誌貢獻期刊論文同行評審

1 引文 斯高帕斯(Scopus)

摘要

The damage of silicon induced by low-energy (30 eV) CF4 discharges in a rf hollow oval magnetron system has been studied. The damage level was evaluated by the surface trap density measured by the high-low frequency capacitance-voltage method. By comparison with the results obtained using low-energy Ar discharges and other high-energy (450 eV) CF4 and Ar discharges, the involatile reaction residue was inferred as the major cause of damage in the low-energy CF4 discharges.

原文???core.languages.en_GB???
頁(從 - 到)1589-1590
頁數2
期刊Journal of Applied Physics
64
發行號3
DOIs
出版狀態已出版 - 1988

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