摘要
The damage of silicon induced by low-energy (30 eV) CF4 discharges in a rf hollow oval magnetron system has been studied. The damage level was evaluated by the surface trap density measured by the high-low frequency capacitance-voltage method. By comparison with the results obtained using low-energy Ar discharges and other high-energy (450 eV) CF4 and Ar discharges, the involatile reaction residue was inferred as the major cause of damage in the low-energy CF4 discharges.
原文 | ???core.languages.en_GB??? |
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頁(從 - 到) | 1589-1590 |
頁數 | 2 |
期刊 | Journal of Applied Physics |
卷 | 64 |
發行號 | 3 |
DOIs | |
出版狀態 | 已出版 - 1988 |