Damage of silicon induced by low-energy Ar magnetron discharges

F. Y. Chen, I. Lin, C. H. Lin

研究成果: 雜誌貢獻期刊論文同行評審

7 引文 斯高帕斯(Scopus)

摘要

The physical damage induced in silicon by argon magnetron discharges has been studied. The surface trap density measured with the high-low frequency capacitance-voltage method was used to evaluate the degree of damage on the substrate. No damage is found for substrates sputter-etched in an RF discharge with 30 eV mean ion energy. Substrates sputter etched in 450 eV DC discharge show damage similar to that obtained in other glow discharge or ion milling systems with the same energy.

原文???core.languages.en_GB???
文章編號010
頁(從 - 到)533-536
頁數4
期刊Semiconductor Science and Technology
2
發行號8
DOIs
出版狀態已出版 - 1987

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