Current transport of GaAsSb-based DHBTs with different emitter structures

Chun ting Pan; Che ming Wang; Yue ming Hsin; H. J. Zhu; J. M. Kuo; Y. C. Kao

doi:10.1016/j.sse.2009.03.013

Current transport of GaAsSb-based DHBTs with different emitter structures

Chun ting Pan, Che ming Wang, Yue ming Hsin, H. J. Zhu, J. M. Kuo, Y. C. Kao

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

5 引文斯高帕斯（Scopus）

摘要

In this study, we compare our InAlAs-InP/GaAsSb DHBT with other published GaAsSb-based DHBTs in the dc characteristics by examining the Gummel plot and simulation analysis. The InAlAs-InP and InP-InAlAs composite emitters can effectively reduce electron pile-up as found in the InP/GaAsSb DHBT, thus increasing current gain significantly at low current density. Although electron pile-up is found in the InP/GaAsSb DHBT from the type-II conduction band barrier, it shows better operation at the high current regime than composite emitter structures because at high bias the abrupt heterojunction formed at the InP-InAlAs interface blocks carriers and degrades the inject efficiency.

原文	???core.languages.en_GB???
頁（從 - 到）	574-577
頁數	4
期刊	Solid-State Electronics
卷	53
發行號	6
DOIs	https://doi.org/10.1016/j.sse.2009.03.013
出版狀態	已出版 - 6月 2009

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10.1016/j.sse.2009.03.013

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@article{e862e0e95cfd4120bf0de6bc49d1edb3,

title = "Current transport of GaAsSb-based DHBTs with different emitter structures",

abstract = "In this study, we compare our InAlAs-InP/GaAsSb DHBT with other published GaAsSb-based DHBTs in the dc characteristics by examining the Gummel plot and simulation analysis. The InAlAs-InP and InP-InAlAs composite emitters can effectively reduce electron pile-up as found in the InP/GaAsSb DHBT, thus increasing current gain significantly at low current density. Although electron pile-up is found in the InP/GaAsSb DHBT from the type-II conduction band barrier, it shows better operation at the high current regime than composite emitter structures because at high bias the abrupt heterojunction formed at the InP-InAlAs interface blocks carriers and degrades the inject efficiency.",

keywords = "GaAsSb, InAlAs, InP, Type-II DHBT",

author = "Pan, {Chun ting} and Wang, {Che ming} and Hsin, {Yue ming} and Zhu, {H. J.} and Kuo, {J. M.} and Kao, {Y. C.}",

note = "Funding Information: The authors would like to thank the National Science Council of the Republic of China, Taiwan, for financially supporting this research under Contract No. NSC 96-2218-E-008-005. ",

year = "2009",

month = jun,

doi = "10.1016/j.sse.2009.03.013",

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volume = "53",

pages = "574--577",

journal = "Solid-State Electronics",

issn = "0038-1101",

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T1 - Current transport of GaAsSb-based DHBTs with different emitter structures

AU - Pan, Chun ting

AU - Wang, Che ming

AU - Hsin, Yue ming

AU - Zhu, H. J.

AU - Kuo, J. M.

AU - Kao, Y. C.

N1 - Funding Information: The authors would like to thank the National Science Council of the Republic of China, Taiwan, for financially supporting this research under Contract No. NSC 96-2218-E-008-005.

PY - 2009/6

Y1 - 2009/6

N2 - In this study, we compare our InAlAs-InP/GaAsSb DHBT with other published GaAsSb-based DHBTs in the dc characteristics by examining the Gummel plot and simulation analysis. The InAlAs-InP and InP-InAlAs composite emitters can effectively reduce electron pile-up as found in the InP/GaAsSb DHBT, thus increasing current gain significantly at low current density. Although electron pile-up is found in the InP/GaAsSb DHBT from the type-II conduction band barrier, it shows better operation at the high current regime than composite emitter structures because at high bias the abrupt heterojunction formed at the InP-InAlAs interface blocks carriers and degrades the inject efficiency.

AB - In this study, we compare our InAlAs-InP/GaAsSb DHBT with other published GaAsSb-based DHBTs in the dc characteristics by examining the Gummel plot and simulation analysis. The InAlAs-InP and InP-InAlAs composite emitters can effectively reduce electron pile-up as found in the InP/GaAsSb DHBT, thus increasing current gain significantly at low current density. Although electron pile-up is found in the InP/GaAsSb DHBT from the type-II conduction band barrier, it shows better operation at the high current regime than composite emitter structures because at high bias the abrupt heterojunction formed at the InP-InAlAs interface blocks carriers and degrades the inject efficiency.

KW - GaAsSb

KW - InAlAs

KW - InP

KW - Type-II DHBT

UR - http://www.scopus.com/inward/record.url?scp=65549096265&partnerID=8YFLogxK

U2 - 10.1016/j.sse.2009.03.013

DO - 10.1016/j.sse.2009.03.013

M3 - 期刊論文

AN - SCOPUS:65549096265

SN - 0038-1101

VL - 53

SP - 574

EP - 577

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 6

ER -

Current transport of GaAsSb-based DHBTs with different emitter structures

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