CUrrent-Induced Breakdown In P-Type Collector Algaas/Gaas Hbt'S

G. B. Gao; D. Huang; J. I. Chyi; J. Chen; H. Morkoc

doi:10.1109/16.47791

CUrrent-Induced Breakdown In P-Type Collector Algaas/Gaas Hbt'S

G. B. Gao, D. Huang, J. I. Chyi, J. Chen, H. Morkoc

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

5 引文斯高帕斯（Scopus）

摘要

A phenomenon called “current-induced breakdown” that may occur in p-type collector heterojunction bipolar transistors is described. It is shown that the breakdown voltage across the p-type col-.

原文	???core.languages.en_GB???
頁（從 - 到）	807-810
頁數	4
期刊	IEEE Transactions on Electron Devices
卷	37
發行號	3
DOIs	https://doi.org/10.1109/16.47791
出版狀態	已出版 - 3月 1990

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10.1109/16.47791

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CUrrent-Induced Breakdown In P-Type Collector Algaas/Gaas Hbt'S

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