CUrrent-Induced Breakdown In P-Type Collector Algaas/Gaas Hbt'S

G. B. Gao, D. Huang, J. I. Chyi, J. Chen, H. Morkoc

研究成果: 雜誌貢獻期刊論文同行評審

5 引文 斯高帕斯(Scopus)

摘要

A phenomenon called “current-induced breakdown” that may occur in p-type collector heterojunction bipolar transistors is described. It is shown that the breakdown voltage across the p-type col-.

原文???core.languages.en_GB???
頁(從 - 到)807-810
頁數4
期刊IEEE Transactions on Electron Devices
37
發行號3
DOIs
出版狀態已出版 - 3月 1990

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