Crystallization phase transition in the precursors of CIGS films by Ar-ion plasma etching process

Keyphrases

• 1-stage 33%
• Alloy Target 33%
• Annealing 33%
• Annealing Temperature 33%
• Ar Ions 100%
• CIGS Film 100%
• Co-sputtering Method 33%
• Crevice 33%
• Crystalline Properties 33%
• Crystallographic Phase 100%
• Cu-rich 33%
• CuInS 33%
• DC Magnetron 33%
• Etching Process 33%
• Ga-based Alloy 33%
• Indium 33%
• Indium Target 33%
• Intermetallic Phases 33%
• Ion Etching 33%
• Large Grain Size 33%
• Magnetron Co-sputtering 33%
• Mixed Alloys 33%
• Pair-ion Plasma 100%
• Phase Transition 100%
• Plasma Etching Process 100%
• Rapid Thermal Annealing 33%
• Secondary Crystallization 33%
• Selenization 33%
• Selenization Process 66%
• Stoichiometric Ratio 33%
• Surface Morphology 33%

Material Science

• Annealing 66%
• Copper Alloy 33%
• Film 100%
• Grain Size 33%
• Indium 66%
• Plasma Etching 100%
• Surface (Surface Science) 33%
• Surface Morphology 33%

Engineering

• Annealing Process 33%
• Annealing Temperature 33%
• Etching Process 100%
• Magnetron 33%
• Rapid Thermal Annealing 33%
• Secondary Crystallization 33%
• Surface Morphology 33%