Crystal orientation dependence of optical gain in InGaN/GaN multiple-quantum-well structures

Chii Chang Chen; Kun Long Hsieh; Jinn Kong Sheu; Gou Chung Chi; Ming Juinn Jou; Chih Hao Lee; Ming Zhe Lin

doi:10.1063/1.1402155

Crystal orientation dependence of optical gain in InGaN/GaN multiple-quantum-well structures

Chii Chang Chen, Kun Long Hsieh, Jinn Kong Sheu, Gou Chung Chi, Ming Juinn Jou, Chih Hao Lee, Ming Zhe Lin

光電科學與工程學系

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

7 引文斯高帕斯（Scopus）

摘要

The net modal gain of the InGaN/GaN multiple quantum well has been measured by the variable excitation stripe length method for an optically pumped cavity along each crystal orientation on the (0001) plane. These results demonstrated the theoretical prediction of the fact that the maximum optical gain can be obtained at a [1210]-oriented edge-emitting laser cavity, which has been reported in the literature. "Crystal orientation" is confirmed to be a related parameter to the optical gain for a GaN-based strained structure.

原文	???core.languages.en_GB???
頁（從 - 到）	1477-1479
頁數	3
期刊	Applied Physics Letters
卷	79
發行號	10
DOIs	https://doi.org/10.1063/1.1402155
出版狀態	已出版 - 3 9月 2001

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10.1063/1.1402155

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abstract = "The net modal gain of the InGaN/GaN multiple quantum well has been measured by the variable excitation stripe length method for an optically pumped cavity along each crystal orientation on the (0001) plane. These results demonstrated the theoretical prediction of the fact that the maximum optical gain can be obtained at a [1210]-oriented edge-emitting laser cavity, which has been reported in the literature. {"}Crystal orientation{"} is confirmed to be a related parameter to the optical gain for a GaN-based strained structure.",

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AU - Chen, Chii Chang

AU - Hsieh, Kun Long

AU - Sheu, Jinn Kong

AU - Chi, Gou Chung

AU - Jou, Ming Juinn

AU - Lee, Chih Hao

AU - Lin, Ming Zhe

PY - 2001/9/3

Y1 - 2001/9/3

N2 - The net modal gain of the InGaN/GaN multiple quantum well has been measured by the variable excitation stripe length method for an optically pumped cavity along each crystal orientation on the (0001) plane. These results demonstrated the theoretical prediction of the fact that the maximum optical gain can be obtained at a [1210]-oriented edge-emitting laser cavity, which has been reported in the literature. "Crystal orientation" is confirmed to be a related parameter to the optical gain for a GaN-based strained structure.

AB - The net modal gain of the InGaN/GaN multiple quantum well has been measured by the variable excitation stripe length method for an optically pumped cavity along each crystal orientation on the (0001) plane. These results demonstrated the theoretical prediction of the fact that the maximum optical gain can be obtained at a [1210]-oriented edge-emitting laser cavity, which has been reported in the literature. "Crystal orientation" is confirmed to be a related parameter to the optical gain for a GaN-based strained structure.

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

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Crystal orientation dependence of optical gain in InGaN/GaN multiple-quantum-well structures

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