Critical volume fraction of crystallinity for conductivity percolation in phosphorus-doped Si:F:H alloys

R. Tsu, J. Gonzalez-Hernandez, S. S. Chao, S. C. Lee, K. Tanaka

研究成果: 雜誌貢獻期刊論文同行評審

317 引文 斯高帕斯(Scopus)

摘要

We have used Raman scattering to deduce the volume fraction of crystallinity for the highly phosphorus-doped glow-discharge Si:F:H alloys. The measured critical volume fraction at the onset of rapidly increased conduction in this two-phase system of microcrystallites embedded in an amorphous matrix is 0.18. This value coincides with the theoretical percolation limit and serves to explain the conduction process in these two-phase materials which are useful as contacts in amorphous solar cells.

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頁(從 - 到)534-535
頁數2
期刊Applied Physics Letters
40
發行號6
DOIs
出版狀態已出版 - 1982

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