Crack-free GaN grown on AlGaN (111) Si micropillar array fabricated by polystyrene microsphere lithography

Guan Ting Chen, Jen Inn Chyi, Chia Hua Chan, Chia Hung Hou, Chii Chang Chen, Mao Nan Chang

研究成果: 雜誌貢獻期刊論文同行評審

13 引文 斯高帕斯(Scopus)

摘要

The authors report on the growth of GaN on AlGaN (111) Si micropillar array by metal-organic chemical vapor deposition. Using the substrates with micropillar array, 2-μm -thick GaN films without cracks can be achieved. Transmission electron microscopy, atomic force microscopy, and micro-Raman studies indicate that the dislocation density and residual stress of the GaN grown on micropillar array are also reduced. The results reveal the potential of this type of substrates for growing GaN-based devices as well as preparing GaN freestanding substrates.

原文???core.languages.en_GB???
文章編號261910
期刊Applied Physics Letters
91
發行號26
DOIs
出版狀態已出版 - 2007

指紋

深入研究「Crack-free GaN grown on AlGaN (111) Si micropillar array fabricated by polystyrene microsphere lithography」主題。共同形成了獨特的指紋。

引用此