Computational Screening and Multiscale Simulation of Barrier-Free Contacts for 2D Semiconductor pFETs

Ning Yang, Yuxuan Cosmi Lin, Chih Piao Chuu, Saifur Rahman, Tong Wu, Ang Sheng Chou, San Lin Liew, Kohei Fujiwara, Hung Yu Chen, Junya Ikeda, Atsushi Tsukazaki, Duen Huei Hou, Wei Yen Woon, Szuya Liao, Shengxi Huang, Xiaofeng Qian, Jing Guo, Iuliana Radu, H. S. Philip Wong, Han Wang

研究成果: 書貢獻/報告類型會議論文篇章同行評審

5 引文 斯高帕斯(Scopus)

摘要

Low-resistance p-type contacts to two-dimensional (2D) semiconductors remains a critical challenge towards the industrial application of 2D channel materials in advanced logic technology. To address this challenge, we computationally screen and identify designs for ultralow-resistance p-type contacts to 2D semiconductors such as WSe2 by combining ab initio density-functional-theory (DFT) and quantum device simulations. Two new contact strategies, van der Waals metallic contact (such as 1H-NbS2), and bulk semimetallic contact (such as Co3 Sn2 S2), are identified as realistic pathways to achieving Schottky-barrier-free and low-contact-resistance p-type contacts for 2D semiconductor pFETs. Simulations of these new strategies suggest reduced metal-induced gap states, negligible Schottky barrier height and small contact resistance (down to 20 Ω·μm). Preliminary experimental results in developing Co3 Sn2 S2 as a new semimetal contact material are also demonstrated.

原文???core.languages.en_GB???
主出版物標題2022 International Electron Devices Meeting, IEDM 2022
發行者Institute of Electrical and Electronics Engineers Inc.
頁面2811-2814
頁數4
ISBN(電子)9781665489591
DOIs
出版狀態已出版 - 2022
事件2022 International Electron Devices Meeting, IEDM 2022 - San Francisco, United States
持續時間: 3 12月 20227 12月 2022

出版系列

名字Technical Digest - International Electron Devices Meeting, IEDM
2022-December
ISSN(列印)0163-1918

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???event.eventtypes.event.conference???2022 International Electron Devices Meeting, IEDM 2022
國家/地區United States
城市San Francisco
期間3/12/227/12/22

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