Compositional inhomogeneities in InGaN/GaN quantum wells studied with high resolution transmission electron microscopy

Keyphrases

• Indium Gallium Nitride (InGaN) 100%
• High-resolution Transmission Electron Microscopy (HRTEM) 100%
• InGaN Quantum Wells 100%
• Compositional Inhomogeneity 100%
• Metal-organic Chemical Vapor Deposition (MOCVD) 50%
• Optical Properties 50%
• X Ray Diffraction 50%
• Selected Area Electron Diffraction 50%
• Phase Separation 50%
• Diffraction Ray 50%
• Multiple Quantum Wells 50%
• Indium 50%
• Indium Content 50%
• V-shaped 50%
• Light-emitting Devices 50%
• Indium Composition 50%
• Structure Ordering 50%
• Spinodal Decomposition 50%
• Planar Faults 50%
• Shape Defect 50%
• Quantum Well Width 50%
• Fault Separation 50%
• Faulty Phase 50%
• Fault Clustering 50%
• Aggregation Size 50%

Material Science

• Indium 100%
• Quantum Well 100%
• High-Resolution Transmission Electron Microscopy 100%
• Optical Property 33%
• X-Ray Diffraction 33%
• Selected Area Diffraction 33%

Engineering

• High Resolution 100%
• Quantum Well 100%
• Ray Diffraction 33%
• Phase Separation 33%
• Emitting Device 33%
• Indium Content 33%