摘要
The information on variations in indium composition, aggregation size, and quantum well width is crucially important for understanding the optical properties; and, hence, the fabrication of efficient light-emitting devices. Our results showed that spinodal decomposition could occur in InGaN/GaN multiple-quantum wells with 20 % nominal indium content, grown with MOCVD. In such a structure, ordering, planar faults, clustering, and phase separation were simultaneously observed with high-resolution transmission electron microscopy, selected area diffraction, and X-ray diffraction. It seemed that the indium-rich precipitates with diameter ranging from 5 to 10 nm has preference for aggregation near V-shape defects.
原文 | ???core.languages.en_GB??? |
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頁(從 - 到) | 121-126 |
頁數 | 6 |
期刊 | Journal of the Chinese Institute of Electrical Engineering, Transactions of the Chinese Institute of Engineers, Series E/Chung KuoTien Chi Kung Chieng Hsueh K'an |
卷 | 9 |
發行號 | 2 |
出版狀態 | 已出版 - 5月 2002 |