Compositional inhomogeneities in InGaN/GaN quantum wells studied with high resolution transmission electron microscopy

Yen Sheng Lin, Chen Hsu, Kung Jeng Ma, Shih Wei Feng, Chi Chih Liao, C. C. Yang, Chang Cheng Chou, Chia Ming Lee, Jen Inn Chyi

研究成果: 雜誌貢獻期刊論文同行評審

摘要

The information on variations in indium composition, aggregation size, and quantum well width is crucially important for understanding the optical properties; and, hence, the fabrication of efficient light-emitting devices. Our results showed that spinodal decomposition could occur in InGaN/GaN multiple-quantum wells with 20 % nominal indium content, grown with MOCVD. In such a structure, ordering, planar faults, clustering, and phase separation were simultaneously observed with high-resolution transmission electron microscopy, selected area diffraction, and X-ray diffraction. It seemed that the indium-rich precipitates with diameter ranging from 5 to 10 nm has preference for aggregation near V-shape defects.

原文???core.languages.en_GB???
頁(從 - 到)121-126
頁數6
期刊Journal of the Chinese Institute of Electrical Engineering, Transactions of the Chinese Institute of Engineers, Series E/Chung KuoTien Chi Kung Chieng Hsueh K'an
9
發行號2
出版狀態已出版 - 5月 2002

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