Comparison of the electrical and luminescent properties of p-layer-up and n-layer-up GaN/InGaN light emitting diodes and the effects of Mn doping of the upper n-layer

A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, Jihyun Kim, F. Ren, G. T. Thaler, M. E. Overberg, R. Frazier, C. R. Abernathy, S. J. Pearton, C. M. Lee, J. I. Chyi, R. G. Wilson, J. M. Zavada

研究成果: 雜誌貢獻期刊論文同行評審

12 引文 斯高帕斯(Scopus)

摘要

Electrical and luminescent properties of normal p-side-up and inverted n-side-up light emitting diodes (p-LEDs and n-LEDs) and the effect of Mn incorporation into the upper n-type contact layer structure of GaN-based multiquantum-well MQW LEDs were studied. The latter structure is considered as promising for spintronic applications (spin-LED). It is shown that n-LEDs have more pronounced tunneling compared to p-LEDs and that the active region of the n-LEDs shows domain-like nonuniformities that are absent in p-LEDs. These nonuniformities seem to be related to local segregation of In in the GaN/InGaN MQWs and result in the emergency of double peaked electroluminescence (EL) spectra in n-LEDs. Introduction of Mn leads to strong increase of the resistivity of the GaMnN layer which gives rise to increased threshold voltage for observing the EL and decreased EL intensity.

原文???core.languages.en_GB???
頁(從 - 到)981-987
頁數7
期刊Solid-State Electronics
47
發行號6
DOIs
出版狀態已出版 - 6月 2003

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