@inproceedings{d3edbe135cf34a709845cde59b26a05a,
title = "Comparison of enhancement- and depletion-mode triple stacked power amplifiers in 0.5 μm AlGaAs/GaAs PHEMT technology",
abstract = "This paper describes triple stacked power amplifiers using 0.5 μm enhancement- and depletion-mode (E/D-mode) AlGaAs/GaAs pseudomorphic high electron-mobility transistors (PHEMTs). Based on the optimum capacitance at the gate termination of common-gate (CG) transistor, the output 1-dB compression points (P1dB) of the E- and D-mode triple stacked power amplifiers are 22.1 and 19.3 dBm, respectively. The third-order output intercept point (OIP3) of the E- and D-mode stacked power amplifiers are higher than 32 and 25 dBm, respectively. The E-mode stacked power amplifier demonstrates better output power and linearity as compared with the D-mode stacked power amplifier due to the device characteristics. Moreover, the comparison between the E- and the D-mode tacked power amplifiers is also presented.",
keywords = "Enhancement/depletion-pseudomorphic high-electron mobility transistor (E/D-PHEMT), Power Amplifier (PA), Stacked PA",
author = "Shen, {Chih Chun} and Chang, {Hong Yeh} and Vendelin, {George D.}",
year = "2009",
language = "???core.languages.en_GB???",
isbn = "9782874870125",
series = "European Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies, Conference Proceedings - 4th European Microwave Integrated Circuits Conference, EuMIC 2009",
pages = "222--225",
booktitle = "European Microwave Week 2009, EuMW 2009",
note = "European Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies - 4th European Microwave Integrated Circuits Conference, EuMIC 2009 ; Conference date: 28-09-2009 Through 02-10-2009",
}