Collective and individual emissions for InGaAs quantum dots in photonic crystal nanocavity

W. Y. Chen, H. S. Chang, W. H. Chang, T. P. Hsieh, J. I. Chyi, T. M. Hsu

研究成果: 書貢獻/報告類型會議論文篇章同行評審

摘要

We investigate the collective and individual emissions from In 0.5Ga0.5As quantum dots (QDs) in single-defect photonic crystal nanocavities. The cavity mode collectively excited by the QD ensemble shows a pair of dipole-like modes with definite linear polarizations. Single exciton emission lines are resolved under low excitation power. By monitoring the power dependence of individual QD emissions, a nearly tenfold light enhancement for on-resonance QDs is observed. The polarization states of individual QDs are also investigated. It is found that either a pure dipole mode or a mixture of both dipole modes could be excited by an individual dot. These behaviors are attributed to the random distribution of QD location in the nanocavity.

原文???core.languages.en_GB???
主出版物標題Physics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B
頁面879-880
頁數2
DOIs
出版狀態已出版 - 2007
事件28th International Conference on the Physics of Semiconductors, ICPS 2006 - Vienna, Austria
持續時間: 24 7月 200628 7月 2006

出版系列

名字AIP Conference Proceedings
893
ISSN(列印)0094-243X
ISSN(電子)1551-7616

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???event.eventtypes.event.conference???28th International Conference on the Physics of Semiconductors, ICPS 2006
國家/地區Austria
城市Vienna
期間24/07/0628/07/06

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