Cold-mode characteristics of 90 nm CMOS device with negative body bias and highly linear millimeter-wave switch applications

Guan Yu Chen, Hong Yeh Chang, Ching Yan Chan, Wen Hua Tu, Chin Shen Lin, Kevin Chen, Szu Hsien Wu

研究成果: 書貢獻/報告類型會議論文篇章同行評審

2 引文 斯高帕斯(Scopus)

摘要

In this paper, a negative body bias technique is employed to enhance the performance of a single-port double-throw (SPDT) traveling-wave switch. The switch is fabricated using a commercial standard bulk 90 nm CMOS process. Between 30 and 92 GHz, the proposed circuit demonstrates an insertion loss of lower than 3.7 dB, an isolation of higher than 35 dB, an output 1-dB compression point (P1dB) of higher than 17 dBm, and an input third-order intercept point (IIP3) of higher than 28 dBm. The core area of the switch is 0.3 × 0.2 mm2. With the body bias, the insertion loss and the linearity of the switch are both improved since the parasitic capacitance of the NMOS device is further reduced. The design concept and theory calculation are also presented.

原文???core.languages.en_GB???
主出版物標題2010 Asia-Pacific Microwave Conference Proceedings, APMC 2010
頁面554-557
頁數4
出版狀態已出版 - 2010
事件2010 Asia-Pacific Microwave Conference, APMC 2010 - Yokohama, Japan
持續時間: 7 12月 201010 12月 2010

出版系列

名字Asia-Pacific Microwave Conference Proceedings, APMC

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???event.eventtypes.event.conference???2010 Asia-Pacific Microwave Conference, APMC 2010
國家/地區Japan
城市Yokohama
期間7/12/1010/12/10

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