Co-P Diffusion Barrier for p-Bi2Te3 Thermoelectric Material

Chun Hsien Wang, Hsien Chien Hsieh, Hsin Yi Lee, Albert T. Wu

研究成果: 雜誌貢獻期刊論文同行評審

31 引文 斯高帕斯(Scopus)

摘要

(Bi0.25Te0.75)2Te3 (p-Bi2Te3) is thermoelectric material that can harvest waste heat into useful electric power. A severe reaction between p-Bi2Te3 and Sn-based solder decreases the reliability of thermoelectric modules. Sn/p-Bi2Te3 and Sn3.0Ag0.5Cu (SAC305)/p-Bi2Te3 with and without electroless Co-P at the interfaces were investigated in this study. Without a Co-P layer, brittle SnTe, Sn3Sb2, and Bi precipitates formed at the interface. A thin layer of SnTe after reflow results in growth of a layer-type Sn3Sb2 instead of a strip-like Sn3Sb2. The addition of a Co-P layer to both systems successfully inhibited the formation of brittle intermetallic compounds. Shear test results confirmed that the Co-P diffusion barrier also effectively increased the joint strength.

原文???core.languages.en_GB???
頁(從 - 到)53-57
頁數5
期刊Journal of Electronic Materials
48
發行號1
DOIs
出版狀態已出版 - 15 1月 2019

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