Characterization of low temperature GaAs grown by molecular beam epitaxy

W. C. Lee; T. M. Hsu; J. I. Chyi; G. S. Lee; W. H. Li; K. C. Lee

doi:10.1016/0169-4332(95)00204-9

Characterization of low temperature GaAs grown by molecular beam epitaxy

W. C. Lee, T. M. Hsu, J. I. Chyi, G. S. Lee, W. H. Li, K. C. Lee

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

5 引文斯高帕斯（Scopus）

摘要

Low temperature GaAs has been grown by molecular beam epitaxy at substrate temperatures between 200°C-400°C, and subsequently annealed in the growth chamber at 600°C. These samples have been characterized by X-ray and Raman spectroscopy. From the rocking curve of a high resolution double crystal X-ray diffraction system we observed that GaAs layers grown at low temperatures were highly strained and contained about 1% excess arsenic. These results have been compared with an analysis of LO and TO frequency splitting in the Raman spectra.

原文	???core.languages.en_GB???
頁（從 - 到）	66-69
頁數	4
期刊	Applied Surface Science
卷	92
DOIs	https://doi.org/10.1016/0169-4332(95)00204-9
出版狀態	已出版 - 2月 1996

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10.1016/0169-4332(95)00204-9

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@article{a94ddc30209f473db0e97a2e102259a9,

title = "Characterization of low temperature GaAs grown by molecular beam epitaxy",

abstract = "Low temperature GaAs has been grown by molecular beam epitaxy at substrate temperatures between 200°C-400°C, and subsequently annealed in the growth chamber at 600°C. These samples have been characterized by X-ray and Raman spectroscopy. From the rocking curve of a high resolution double crystal X-ray diffraction system we observed that GaAs layers grown at low temperatures were highly strained and contained about 1% excess arsenic. These results have been compared with an analysis of LO and TO frequency splitting in the Raman spectra.",

author = "Lee, {W. C.} and Hsu, {T. M.} and Chyi, {J. I.} and Lee, {G. S.} and Li, {W. H.} and Lee, {K. C.}",

note = "Funding Information: The authors would like to thank the optical center of the National Central University for the use of the MBE system. The work is supported in part by National Science Council of Republic of China under Grant No. NSC84-2112-M-008-009.",

year = "1996",

month = feb,

doi = "10.1016/0169-4332(95)00204-9",

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volume = "92",

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journal = "Applied Surface Science",

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TY - JOUR

T1 - Characterization of low temperature GaAs grown by molecular beam epitaxy

AU - Lee, W. C.

AU - Hsu, T. M.

AU - Chyi, J. I.

AU - Lee, G. S.

AU - Li, W. H.

AU - Lee, K. C.

N1 - Funding Information: The authors would like to thank the optical center of the National Central University for the use of the MBE system. The work is supported in part by National Science Council of Republic of China under Grant No. NSC84-2112-M-008-009.

PY - 1996/2

Y1 - 1996/2

N2 - Low temperature GaAs has been grown by molecular beam epitaxy at substrate temperatures between 200°C-400°C, and subsequently annealed in the growth chamber at 600°C. These samples have been characterized by X-ray and Raman spectroscopy. From the rocking curve of a high resolution double crystal X-ray diffraction system we observed that GaAs layers grown at low temperatures were highly strained and contained about 1% excess arsenic. These results have been compared with an analysis of LO and TO frequency splitting in the Raman spectra.

AB - Low temperature GaAs has been grown by molecular beam epitaxy at substrate temperatures between 200°C-400°C, and subsequently annealed in the growth chamber at 600°C. These samples have been characterized by X-ray and Raman spectroscopy. From the rocking curve of a high resolution double crystal X-ray diffraction system we observed that GaAs layers grown at low temperatures were highly strained and contained about 1% excess arsenic. These results have been compared with an analysis of LO and TO frequency splitting in the Raman spectra.

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U2 - 10.1016/0169-4332(95)00204-9

DO - 10.1016/0169-4332(95)00204-9

M3 - 期刊論文

AN - SCOPUS:0030562463

VL - 92

SP - 66

EP - 69

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

ER -

Characterization of low temperature GaAs grown by molecular beam epitaxy

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